Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

Dash, Sidhartha; Lenka, Annada Shankar; Jena, Biswajit; Mishra, Guru Prasad

doi:10.1002/jnm.2283

Cited by 16 publications

(13 citation statements)

References 33 publications

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“…Linearity and distortion analysis using different matrices such as VIP2, VIP3, IIP3, IMD3, 1‐dB compression point, HD2, HD3, and higher‐order transconductance coefficient are efficient and time‐consuming methods 16–20 . There are some advantages in cylindrical gate TFETs with a source pocket doping in terms of analog, linearity, and RF performance 21 . The effect of adding a ferroelectric layer on RF/analog and linearity analysis for the ferroelectric finFET is also studied 22 .…”

Section: Introductionmentioning

confidence: 99%

Technology computer‐aided design simulation of G e‐source double‐gate S i‐tunnel Field Effect Transistor: Radio frequency and linearity analysis

Baruah

Debnath

Baishya

2022

Int J RF Mic Comp-Aid Eng

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This article presented a thorough investigation of direct current (DC), analog/ radio frequency (RF), and linearity performance of a proposed Ge-source double gate planner Si-tunnel field-effect transistor (TFET) considering different parameter variations using Sentaurus TCAD 2-D device simulator. The analyses are performed using various quality matrices such as transconductance (g m ), total gate capacitance (C gg ), unity gain cut-off frequency (f T ), gainbandwidth product (GBP), transconductance frequency product (TFP), etc. It can be perceived that the inclusion of source/channel junction pocket, low bandgap source material, high k gate dielectric, and dual k spacer technology can improve the TFET performances in terms of on-current (I ON ), off-current (I OFF ), on-off current ratio (I ON / I OFF ) and subthreshold swing (SS) at a supply voltage V DS = 0.7 V. In this article, we used a non-quasi-static (NQS) smallsignal model to analyze the behavior of the proposed device in high-frequency regions. Based on this, the small-signal admittance parameters were validated up to 1 THz. The proposed TFET produced RF figures of merit (FoM), cut-off frequency (f T ), and maximum oscillation frequency (f max ) in the terahertz range at V DS = V GS = 1 V. Linearity and distortion parameters considered here are VIP2 (interpolated input voltage at which first and second harmonics are equal), VIP3 (interpolated input voltage at which first and third harmonics are similar), IIP3 (third-order input intercept point), IMD3 (third-order intermodulation distortion), 1-dB compression point, HD2 (second-order harmonic), HD3 (third-order harmonic) and THD (total harmonic distortion) for different supply voltages. According to the study, the proposed TFET can provide improved RF and linearity performance, ensuring device reliability in lowpower, high-frequency applications. K E Y W O R D Sband to band tunneling (BTBT), cut-off frequency (f T ), gain-bandwidth product (GBP), linearity, transconductance frequency product (TFP), tunnel field-effect transistor (TFET)

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Section: Introductionmentioning

confidence: 99%

Technology computer‐aided design simulation of G e‐source double‐gate S i‐tunnel Field Effect Transistor: Radio frequency and linearity analysis

Baruah

Debnath

Baishya

2022

Int J RF Mic Comp-Aid Eng

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“…Regardless of all these advantages, TFET is dealing with some major issues that correspond to reduced drain current, ambipolar state conduction, and deficient high-frequency performance [8][9][10][11]. Many researchers have introduced several techniques such as gate overlapping on the drain region [12], using hetero gate dielectric [13], tunneling junction engineering [14], gate work function engineering [15], and the introduction of pocket layer [16,17] to raise the ON-state current of all silicon TFETs. These approaches mainly focused on the tunneling barrier width modulation and high electric field at the junction region to enhance the drain current performance.…”

Section: Introductionmentioning

confidence: 99%

Performance Improvement of Heterojunction Double Gate TFET with Gaussian Doping

Sahoo

Dash

Routray

et al. 2020

Silicon

Self Cite

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A new Ge/SiGe heterojunction double-gate tunnel field effect transistor (DGT) model with hetero dielectric gate and Gaussian doping drain region is investigated for the first time. The introduction of heterojunction with hetero dielectric will reduce band-toband tunneling (BTBT) leakage current while maintaining high mobility to enhance drain current and transconductance characteristics of the device significantly. Along with that, the combined effect of analytical drain doping profile (Gaussian) and hetero dielectric suppresses the ambipolar behavior. Different DC characteristics of the device like energy band analysis, electric field, drain current and BTBT generation rate are analyzed for the proposed structure. RF figure of merit for the HD-HJDGT-GD is express by analyzing its transconductance (g m ), cut off frequency (f T ), maximum oscillation frequency (f max ), gain bandwidth product (GBP) and transconductance frequency product (TFP). The outcome of the model under study is compared with conventional DGT. It is apparent from the analysis that the recommended model has better DC and RF performance, which makes this device worth studying to be used in high-frequency applications. TCAD simulation is performed by using Sentaurus 2D device simulator from Synopsys. Keywords Heterojunction . Hetero dielectric . Analytical doping (Gaussian) . Band to band tunneling (BTBT)

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“…On the other hand, the existence of higher‐order harmonics causes the non‐linear behaviour of the device owing to the loss of information [1, 2]. Therefore, it is the primary concern to choose the device which ensures the minimal influence of inter‐modulation distortions and high‐order harmonics on the reliability of the device [3, 4]. Thus, a novel device having a lower value of subthreshold slope (

normalSS

) is required.…”

Section: Introductionmentioning

confidence: 99%

Investigation of RF and linearity performance of electrode work‐function engineered HDB vertical TFET

Narwal

Chauhan

2019

Micro & Nano Letters

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This work realises a hetero-dielectric buried oxide vertical tunnel field effect transistor (HDB VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the concept of hetero-dielectric buried oxide (BOX) in VTFET is used to obtain the superior improvement in terms of different RF and linearity figure of merits such as C gs , C gd , C gg , f T , Gain Bandwidth Product (GBP), t, Transconductance Frequency Product (TFP), Transconductance Generation Factor (TGF), g m2 , g m3 , VIP 2 , VIP 3 , IIP 3 , IMD 3 and 1-dB compression point. Also, the influence of HfO 2 BOX length scaling on these FOMs is analysed. The results reveal that the HDB VTFET can be a promising contender to replace bulk metal-oxide semiconductor field-effect transistors in analogue/mixed signal system-on-chip and high-frequency microwave applications and the accuracy of this device is validated by TCAD Sentaurus simulator.

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Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

Cited by 16 publications

References 33 publications

Technology computer‐aided design simulation of G e‐source double‐gate S i‐tunnel Field Effect Transistor: Radio frequency and linearity analysis

Technology computer‐aided design simulation of G e‐source double‐gate S i‐tunnel Field Effect Transistor: Radio frequency and linearity analysis

Performance Improvement of Heterojunction Double Gate TFET with Gaussian Doping

Investigation of RF and linearity performance of electrode work‐function engineered HDB vertical TFET

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