2014
DOI: 10.1016/j.vacuum.2014.03.029
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Impact of spray flux density and vacuum annealing on the transparent conducting properties of doubly doped (Sn + F) zinc oxide films deposited using a simplified spray technique

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Cited by 40 publications
(10 citation statements)
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“…% of Ta doping both carrier concentration and mobility are found to be high. This higher mobility in this case is believed to be due to the larger grain size which enhances the intra-grain travel time of the carriers [40][41][42]. The obtained minimum resistivity (2.05 x 10 -3 Ωcm) using this inexpensive technique is found to be better than the value for as deposited ZnO:Ta films already reported in the literature [19].…”
Section: Accepted Manuscriptmentioning
confidence: 52%
“…% of Ta doping both carrier concentration and mobility are found to be high. This higher mobility in this case is believed to be due to the larger grain size which enhances the intra-grain travel time of the carriers [40][41][42]. The obtained minimum resistivity (2.05 x 10 -3 Ωcm) using this inexpensive technique is found to be better than the value for as deposited ZnO:Ta films already reported in the literature [19].…”
Section: Accepted Manuscriptmentioning
confidence: 52%
“…The increase in the intensity indicates an improvement in the crystalline quality of the films. This may be due to the improvement of periodicity of atoms in the ZnO lattice caused by the compensation of oxygen vacancies by the incorporated F -ions [24]. where λ is the wavelength of the X-ray (1.5406 Å), β is the full width at half maximum (FWHM) of the peak, θ is the Bragg's angle.…”
Section: Structural Studiesmentioning
confidence: 99%
“…The transmission of the films decreases sharply at the band edge for all the samples. The steep absorption edge is one of the strong supporting evidences for the good crystalline nature and low defect density of the films and hence these films may be considered as potential candidates for the fabrication of optoelectronic devices, window filters and electrodes for photodiode and photovoltaic cells [24].…”
Section: Optical Studiesmentioning
confidence: 99%
“…The optical band gap (E g ) values are calculated using the plots (Fig. 5) drawn between the first derivative of transmittance with respect to the wavelength (dT/dk) and the average wavelength (k avg ) [31]. The optical band gap of undoped Cu 2 O thin film increases with the increase in the Zn doping concentration up to 5 wt% and then decreases at 10 wt% as presented in Table 2.…”
Section: Optical Studiesmentioning
confidence: 99%