2007
DOI: 10.1109/ted.2007.908895
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Impact of STI Effect on Flicker Noise in 0.13-$\mu \hbox{m}$ RF nMOSFETs

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Cited by 14 publications
(3 citation statements)
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“…3a, higher noise (3~5X) in A is observed in comparison with C that may be due to the presence of larger number of dummy poly in A. This conclusion is based on the hypothesis that lateral traps located at the poly-Si/STI interface are contributing to 1/f noise, which is in agreement with [2,4]. In addition, a second order effect -higher mechanical stress (compressive σ STI ) [5] may also impact 1/f.…”
Section: Introductionmentioning
confidence: 67%
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“…3a, higher noise (3~5X) in A is observed in comparison with C that may be due to the presence of larger number of dummy poly in A. This conclusion is based on the hypothesis that lateral traps located at the poly-Si/STI interface are contributing to 1/f noise, which is in agreement with [2,4]. In addition, a second order effect -higher mechanical stress (compressive σ STI ) [5] may also impact 1/f.…”
Section: Introductionmentioning
confidence: 67%
“…Recent literature [1][2][3] discusses the impact on digital circuit performance but hitherto there has been little consideration of noise variations resulting from context layouts [4]. Fig.…”
Section: Introductionmentioning
confidence: 99%
“…4) RTN due to STI sidewall interface states affects threshold voltage variability in flash memories. 5,6) State-of-the-art image sensor devices also have deep trench isolation for suppressing crosstalk. Interface states at the trench isolation sidewall increase dark current and deteriorate image quality.…”
Section: Introductionmentioning
confidence: 99%