Impact of strain on periodic gain structures in vertical external cavity surface-emitting lasers

Abstract

with uniformly distributed quantum wells in microcavity. The dependence of the monomolecular recombination coefficient on structure relaxation has been determined.

High-Efficiency Frequency Doubling Blue-Laser VECSEL Based on Intracavity Beam Control

“…The multi-quantum well active region adjacent to the Bragg reflector consists of nine 7 nanometer-thick InGaAs quantum wells, separated by GaAs barrier layers, which also serve as the pump light absorption layer. GaAsP layers flanking the quantum wells compensate for the material strain induced by InGaAs QWs [ 22 ]. A 30 nm thick AlGaAs window layer is grown on the outer side of the active region to inhibit excited state carriers from escaping to the surface and undergoing non-radiative recombination [ 23 ].…”

On the onset of strain relaxation in the Al0.45Ga0.55As/InxGa1−xAs active region in quantum cascade laser structures

“…Semiconductor systems such as single-layer sequences or periodic structures based on heteroepitaxial III-V layers, in particular InGaAs, AlGaAs and GaAs, have found many applications in electronic and optoelectronic devices, e.g. high electron mobility transistors (Cao et al, 2001;Nawaz et al, 1999), vertical external cavity surface emitting lasers (Jasik et al, 2016;Kuznetsov et al, 1999) and quantum cascade lasers (QCLs) (Kosiel et al, 2009;Page et al, 2001). The optical and electrical parameters of these devices depend on, among other things, the crystal quality of the heterostructures.…”