Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Abstract

Articles you may be interested inImpact of SiGe source/drain induced-compressive strain on low frequency noise in high-k/metal gate pchannel metal-oxide-semiconductor transistors Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 99, 012106 (2011); 10.1063/1.3608241 Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metaloxide-semiconductor field-effect transistors Appl. Phys. Lett. 98, 092112 (2011); 10.1063/1.3560463 Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface nchannel metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 103, 044501 (2008); 10.1063/1.2844553Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels

Investigation of Low‐Frequency Noise Characterization of 28‐nm High‐k pMOSFET with Embedded SiGe Source/Drain

“…As shown in Figure 5, an observed smaller gate current density ( ) in SiGe S/D device confirmed the straininduced increased * and [22]. The is also related to * and by [19,20] …”

“…These results mean that the main source of 1/ noise for both devices can be ascribed to the unified model, which incorporates both the carrier number and the correlated mobility fluctuations. Furthermore, the LS VG can be expressed as [19] …”

Characterization of Oxide Traps in 28 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise

“…Moreover, 1=f noise is also a viable characterization tool for examining the interfacial physics of Si MOSFETs. [11][12][13][14][15] However, it is inadequate for small-area devices (< 1 m 2 ) because large noise level variations exist from sample to sample. [16][17][18] In order to understand the trap property in small-area devices, random telegraph noise (RTN) becomes much more important owing to the capture and emission of single carrier at a gate dielectric trap.…”

Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization

“…Moreover, the 1=f noise has been utilized as a viable characterization tool to evaluate the quality of gate stacks. 5,[16][17][18][19][20][21][22][23][24] In order to further investigate trap properties, the random telegraph noise (RTN) analysis is also utilized. Furthermore, the RTN analysis in small-area devices becomes much more important, owing to the capture and emission of a single carrier at a gate dielectric trap.…”