Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs

Abstract

In this work, effects of structural parameter scaling on IGBT performance were systematically studied for both 1200 V non-scaled (k = 1) and scaled (k = 3) IGBTs. Relatively small area IGBT test devices with varied device parameters were fabricated on 3 inch wafers simultaneously with full size IGBTs. Mesa width, trench depth, p-base depth (MOS channel length) and gate oxide thickness were varied to clarify the contribution of each scaling parameter. P-collector dose was also varied for both k = 1 and k = 3 IGBTs to control the on-sate voltage. Clear on-state voltage improvement was verified in scaled IGBTs, in agreement with TCAD simulations. The origin of the performance improvement and the possibility of further improvement by scaling are discussed. © 2020 The Japan Society of Applied Physics Fig. 1. (Color online) Scaling principle of trench gate IGBTs.

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

“…Remarkable efforts have been made to improve the turn-off energy loss (E off ) versus onstate voltage drop (V ce(sat) ) trade-off. For example, the 3D scaling concepts on trench IGBT (TIGBT) [1][2][3] and trench clustered IGBT (TCIGBT) 4) have resulted in significant improvements in E off -V ce(sat) trade-off. Due to the enhanced thyristor effect, the scaled TCIGBTs show even lower V ce(sat) than the scaled TIGBTs.…”

Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

“…[4][5][6] Recently, a 3D scaling scheme for performance improvements in the trench-gate Si-IGBT has been proposed 7) and demonstrated experimentally. [8][9][10][11] This has also contributed to the enhancement of the IE effect, which indicates that the Si-IGBT performance can be improved by 3D scaling. To further reduce the on-state resistance of Si-IGBTs, a long carrier lifetime is indispensable in addition to increasing the carrier accumulation efficiency by the IE effect.…”