2014
DOI: 10.1088/1674-1056/23/11/117304
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Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Abstract: Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze the role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to… Show more

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