Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Shi, Liu; Li, Hua; Cellek, O. O.; Ding, Ding; Shen, Xiaomeng; Lin, Zheng‐Zhe; Steenbergen, Elizabeth H.; Fan, Jinchen; He, Zhao-Yu; Lu, Jing; Johnson, Shane; Smith, David J.; Zhang, Yong-Hang

doi:10.1063/1.4793231

Cited by 12 publications

(4 citation statements)

References 33 publications

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“…15 The layer structures and schematic band edge diagrams are shown in Figure 1 The PL measurement was performed using a double-modulation technique with a lock-in amplifier and a Fourier Transform Infrared Spectrometer equipped with a HgCdTe photodetector with a cutoff wavelength of 15 µm. The samples were kept in a Janis ST-100 cryostat with a ZnSe window, and excited by an 808 nm laser with average power intensity of 20 W/cm 2 modulated at 50 kHz.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

et al. 2015

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This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature-and excitation -density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm 2 to 20 W/cm 2 . A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.

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Section: Methodsmentioning

confidence: 99%

Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

et al. 2015

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“…Our research identified only two papers on the growth temperature influence on the T2SLs cut-off wavelength. Liu et al changed the Tgrowth of T2SLs InAs/InAsSb from 400 °C to 450 C. Unfortunately, the presented samples prepared for each temperature also differed in period and xSb, and no direct comparison was possible [19]. The Sb cross-incorporation into InAs layers was observed but also not explained.…”

Section: Optical Characterizationmentioning

confidence: 99%

The Dependence of InAs/InAsSb Superlattice Detectors’ Spectral Response on Molecular Beam Epitaxy Growth Temperature

et al. 2022

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In this paper, we report on the influence of molecular beam epitaxial (MBE) growth temperature on the spectral response of the long-wavelength infrared radiation (LWIR), three-stage thermoelectrically (TE) cooled (T = 210, 230 K) InAs/InAsSb type-II superlattice (T2SL)-based detectors grown on the GaSb/GaAs buffer layers/substrates. Likewise, antimony (Sb) composition and the superlattice (SL) period could be used for spectral response selection. The presented results indicate that the growth temperature affects the 50% cut-off (λ50%cut-off) of the fabricated devices and could be used for operating wavelength tunning. Assuming constant Sb composition and T2SL period during MBE process, the growth temperature is presented to influence λ50%cut-off covering entire LWIR (e.g., temperature growth change within the range of 400–450 °C contributes to the λ50%cut-off ~ 11.6–8.3 μm estimated for operating temperature, T = 230 K). An increase in temperature growth makes a blueshift of the λ50%cut-off, and this is postulated to be a consequence of a modification of the SL interfaces. These results show an approach to the T2SL InAs/InAsSb deposition optimization by the growth temperature in terms of the spectral response, without influencing the T2SLs’ structural properties (Sb composition, SL period).

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“…Yet, the microcosmic mechanism regarding higher quantum efficiency is unclear, which has limited the development of InAs/GaSb-based superlattices. Moreover, a minor amount of interfacial defects can induce significant changes into optoelectronic properties. ,− In previous studies, there are two main bonding types between Ga–As and In–Sb which present as tensile strain and compressive strain, respectively . As a highly uniform system, the superlattice which match well with the substrate is of vital importance by regulating fabrication parameters regarding the interfaces.…”

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confidence: 99%

Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice

Han

Liu

et al. 2017

ACS Appl. Mater. Interfaces

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A series of systematic electron microscopy imaging evidence are illustrated to prove that a high-quality interface is vital for enhancing quantum efficiency from 23 to 50% effectively, because improved crystal quality of each layer can suppress the disordered atom arrangement and enhance the carrier lifetime via decreasing the overall residual strain. The distribution width of charge rises and then falls as bias increasing, revealing the existence of an optimum operating voltage, which could be attributed to the proper energy band bending. Our results provide new insights into the understanding of the association between macro-property and microstructure of the superlattice system.

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Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Cited by 12 publications

References 33 publications

Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

The Dependence of InAs/InAsSb Superlattice Detectors’ Spectral Response on Molecular Beam Epitaxy Growth Temperature

Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice

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