Impact of surface preparation on nickel–platinum alloy silicide phase formation

Imbert, B.; Guichet, C.; Bonnetier, Susana; Zoll, S.; Juhel, M.; Hopstaken, Marinus; Clifton, P. H.; Thomas, O.

doi:10.1016/j.mee.2007.05.030

Cited by 16 publications

(11 citation statements)

References 8 publications

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“…(i) Pt is expelled and forms a diffusion barrier between the Ni supply and the growing d-Ni 2 Si phase 15 and (ii) Pt blocks the Ni diffusion paths in the d-Ni 2 Si grain boundaries (for which Ni diffusion has the largest diffusion coefficient in the pure Ni/Si systems). 16 The Pt-induced deceleration in d-Ni 2 Si growth in turn influences the subsequent Ni 1Àx Pt x Si growth. First, Ni 1Àx Pt x Si and d-Ni 2 Si are observed to grow simultaneously, which is most probably invoked by the hindered/limited Ni diffusion.…”

Section: Discussionmentioning

confidence: 99%

“…15 Moreover, it has been observed by atom probe tomography that the majority of Pt embedded in the d-Ni 2 Si layer decorates the d-Ni 2 Si grain boundaries. 16 These grain boundaries comprise the dominating diffusion paths for Ni during d-Ni 2 Si growth. 21 An apparent small Pt content in the growing d-Ni concentrations.…”

Section: A D-ni 2 Si Growthmentioning

confidence: 99%

“…16 Moreover, since Pt appears highly concentrated at the reaction interface during the early stages of NiSi growth, Pt can have a large effect on the Ni 1Àx Pt x Si growth kinetics as well. Therefore, in this paper, we report on the influence of Pt addition on the growth properties of both d-Ni 2 Si and NiSi.…”

Section: Introductionmentioning

confidence: 99%

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On the growth kinetics of Ni(Pt) silicide thin films

Demeulemeester

Smeets

Comrie

et al. 2013

Journal of Applied Physics

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We report on the effect of Pt on the growth kinetics of d-Ni 2 Si and Ni 1Àx Pt x Si thin films formed by solid phase reaction of a Ni(Pt) alloyed thin film on Si(100). The study was performed by real-time Rutherford backscattering spectrometry examining the silicide growth rates for initial Pt concentrations of 0, 1, 3, 7, and 10 at. % relative to the Ni content. Pt was found to exert a drastic effect on the growth kinetics of both phases. d-Ni 2 Si growth is slowed down tremendously, which results in the simultaneous growth of this phase with Ni 1Àx Pt x Si. Activation energies extracted for the Ni 1Àx Pt x Si growth process exhibit an increase from E a ¼ 1.35 6 0.06 eV for binary NiSi to E a ¼ 2.7 6 0.2 eV for Ni 1Àx Pt x Si with an initial Pt concentration of 3 at. %. Further increasing the Pt content to 10 at. % merely increases the activation energy for Ni 1Àx Pt x Si growth to E a ¼ 3.1 6 0.5 eV. V C 2013 AIP Publishing LLC [http://dx

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Section: Discussionmentioning

confidence: 99%

Section: A D-ni 2 Si Growthmentioning

confidence: 99%

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On the growth kinetics of Ni(Pt) silicide thin films

Demeulemeester

Smeets

Comrie

et al. 2013

Journal of Applied Physics

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“…In a metallic structure, grain boundaries can be more subject to corrosive attacks than grains themselves. Furthermore Pt is known [9] to accumulate in grain boundaries which provide heterogenic areas. Also, corrosion and silicon oxidation can occur at grain boundaries and provoke cohesion.…”

Section: Discussionmentioning

confidence: 99%

Self-aligned nickel–platinum silicide oxidation

Imbert

Zoll

Garnier

et al. 2008

Materials Science and Engineering: B

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“…However, countered with these advantages is the complexity introduced by the different Ni silicide phases and the poorer thermal stability of the desirable NiSi phase in post silicide thermal steps. The properties of the silicides depend on the surface preparation, and so given the rough and heterogeneous nature of ps‐laser ablated Si surfaces, it is reasonable to assume that Ni silicide formation may not be uniform across the Si surface exposed by laser ablation. Although the number of processing steps can be reduced by annealing after all plating steps have been performed (see Figure 22), the simpler process allows for less control over the silicide formation than possible with the process used by BP Solar (see Figure ).…”

Section: Challenges For Copper‐plated Silicon Solar Cellsmentioning

confidence: 99%

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

Lennon

Colwell

Rodbell

2018

Progress in Photovoltaics

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Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research to demonstrate that use of Cu would not impact device reliability. However, although Cu‐plated metallisation promises significantly reduced costs for Si photovoltaics, its adoption in manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu‐plated metallisation for Si photovoltaics. These include the following: (1) increased carrier recombination due to the use of Cu for metal contact formation; (2) reduced module reliability due to adhesion or contact integrity failures; and (3) limited availability of cost‐effective processes and equipment for metal plating. For integrated circuits, Cu's low electrical resistance and high resistance to electromigration provided an impetus for the large investment in process development that was required to realise Cu‐plated interconnects. However, the technical advantages of using Cu for Si solar cell contacts are not as compelling, as solar cells can tolerate larger feature sizes thus reducing the criticality of the contact metal's conductivity and electromigration properties. Additionally, for Si photovoltaics, low cost is paramount, and new challenges arise from the need for modules to absorb light and operate in the field for 25+ years in diverse outdoor climates. However, with the scale of Si photovoltaic manufacturing expected to increase dramatically in the next decade, the use of large quantities of silver for cell metallisation will provide an incentive to address reliability concerns regarding the use of Cu for Si photovoltaic metallisation.

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Impact of surface preparation on nickel–platinum alloy silicide phase formation

Cited by 16 publications

References 8 publications

On the growth kinetics of Ni(Pt) silicide thin films

On the growth kinetics of Ni(Pt) silicide thin films

Self-aligned nickel–platinum silicide oxidation

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

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