Impact of surface texture on ultrasonic wire bonding process

Long, Yangyang; Arndt, M.; Dencker, Folke; Wurz, Marc Christopher; Twiefel, Jens; Wallaschek, Jörg

doi:10.1016/j.jmrt.2022.07.187

Cited by 6 publications

(4 citation statements)

References 10 publications

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“…Chuang et al [ 171 ] proved that even after prolonged high HTS at 150 °C for 500 h, IMCs thickness of Ag-8Au-3Pd is only around 1.7 µm, which has much higher reliability than that of the Au-Al IMCs. Long et al [ 172 ] designed and created different surface textures on glass substrates. The results showed that the oxide removal efficiency is enhanced, the IMC growth is improved, and the bonding strength is several times higher than that on smooth surfaces.…”

Section: Ag Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

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Section: Ag Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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“…Chuang et al [171] proved that even after prolonged high HTS at 150 • C for 500 h, IMCs thickness of Ag-8Au-3Pd is only around 1.7 μm, which has much higher reliability than that of the Au-Al IMCs. Long et al [172] designed and created different surface textures on glass substrates. The results showed that the oxide removal efficiency is enhanced, the IMC growth is improved, and the bonding strength is several times higher than that on smooth surfaces.…”

Section: The Reliability Of Ag Bonding Wirementioning

confidence: 99%

Emerging Micro Manufacturing Technologies and Applications

2023

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“…Wire bonding occupies a dominant position in the field of chip packaging because of its mature technology and low cost [1][2][3][4]. Wire bonding can connect the metal cloth welding area or microelectronic packaging I/O lead to the semiconductor chip welding area, which is an important process link in the semiconductor packaging process.…”

Section: Introductionmentioning

confidence: 99%

Processing and Properties of Single-Crystal Copper Wire

Cao,

Wu,

et al. 2023

Micromachines

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The effects of drawing parameters and annealing process on the properties and microstructure of single crystal copper wire are studied using a wire-drawing machine, heat-treatment equipment, microcomputer-controlled electronic universal tester, resistance tester, and scanning electron microscope. The results show that, after drawing the single-crystal copper wire with a single-pass deformation of 14%, the grains elongate along the tensile direction, tensile strength increases from 500.83 MPa to 615.5 Mpa, and resistivity changes from 1.745 × 10−8 Ω·m to 1.732 × 10−8 Ω·m. After drawing at a drawing rate of 500 m/min, the degree of grain refinement increases and tensile strength increases from 615.5 Mpa to 660.26 Mpa. When a copper wire of Φ0.08 mm is annealed, its tensile strength decreases from 660.26 Mpa to 224.7 Mpa, and elongation increases from 1.494% to 19.87% when the annealing temperature increases to 400 °C. When the annealing temperature increases to 550 °C, the tensile strength and elongation decrease to 214.4 MPa and 12.18%, respectively.

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Impact of surface texture on ultrasonic wire bonding process

Cited by 6 publications

References 10 publications

Research Progress on Bonding Wire for Microelectronic Packaging

Research Progress on Bonding Wire for Microelectronic Packaging

Emerging Micro Manufacturing Technologies and Applications

Processing and Properties of Single-Crystal Copper Wire

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