Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits

Kato, Kimihiko; Tanamoto, Tetsufumi; Mori, Takahiro; Morita, Yukinori; Matsukawa, Takashi; Takenaka, Mitsuru; Takagi, Shinichi

doi:10.1109/ted.2020.3010177

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P-channel Tfet and Complementary Tfet Operation1

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2021

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“…Simulation results, shown in Fig. 5, support that p-TFETs can provide similar steep SS and high Ion as n-TFETs under the same device parameters [13,14].…”

Section: P-channel Tfet and Complementary Tfet Operationsupporting

confidence: 52%

7‐5: Invited Paper: Bilayer Tunneling Field Effect Transistors using Oxide Semiconductor/Group‐IV Semiconductor Hetero‐structures

Takagi

Kato

Takenaka

2021

Symp Digest of Tech Papers

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We have proposed and experimentally demonstrated bi‐layer tunneling n‐ and p‐channel FETs (TFETs) composed of oxide semiconductor/ group IV type‐II heterojunctions, utilizing lower conduction band edge of oxide semiconductors than that of group IV semiconductors. The simulation study has revealed that ZnO/Si or Ge TFETs can exhibit extremely‐steep sub‐threshold slope of ~ 1 mV/dec with Ion of ~100 μA/μm order. The operation of bi‐layer ZnO(ZnSnO)/Ge(Si) TFETs has been experimentally demonstrated with a minimal subthreshold slope of 71 mV/dec at room temperature. The p‐TFET operation and n/p‐TFET operations on a same device have also been shown by using ZnSnO/SiGe‐OI structure, leading to realization of C‐TFET

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“…Simulation results, shown in Fig. 5, support that p-TFETs can provide similar steep SS and high Ion as n-TFETs under the same device parameters [13,14].…”

Section: P-channel Tfet and Complementary Tfet Operationsupporting

confidence: 52%