Impact of target power on the properties of sputtered intrinsic zinc oxide (i-ZnO) thin films and its thickness dependence performance on CISe solar cells

Regmi, G.; Velumani, S.

doi:10.1016/j.optmat.2021.111350

Cited by 18 publications

(4 citation statements)

References 47 publications

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“…Similarly, for IZO, the optimal thickness for high solar cell performance is between 0.04 and 0.1 µm, as reported by experiments 51 , 53 – 55 , 58 . If the thickness is less than 0.04 µm, it increases the leakage current, while for a thickness greater than 0.1 µm, the series resistance increases and the built-in field reduces, leading to degraded performance 59 – 61 . Based on material usage and experimental range, we have selected a thickness of 0.05 µm for IZO.…”

Section: Device Structure and Methodsmentioning

confidence: 99%

“…Based on material usage and experimental range, we have selected a thickness of 0.05 µm for IZO. Likewise, the other material parameters of AZO and IZO were adapted from the experiments 57 , 61 . The important parameters of other layers such as buffers, Ag 2 BaTiSe 4 and MoSe 2 were tuned to discover their optimum range and understand their influence on the solar cell performance.…”

Section: Device Structure and Methodsmentioning

confidence: 99%

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Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Arockiya Dass,

Hossain,

Marasamy

2024

Sci Rep

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Cu2ZnSn(S,Se)4 is a non-toxic, earth-abundant photovoltaic absorber. However, its efficiency is limited by a large open circuit voltage (VOC) deficit occurring due to its antisite defects and improper band alignment with toxic CdS buffer. Therefore, finding an absorber and non-toxic buffers that reduce VOC deficit is crucial. Herein, for the first time, Ag2BaTiSe4 is proposed as an alternative absorber using SCAPS-1D wherein a new class of alkaline earth metal chalcogenide such as MgS, CaS, SrS, and BaS is applied as buffers, and their characteristics are compared with CdS to identify their potential and suitability. The buffer and absorber properties are elucidated by tuning their thickness, carrier concentration, and defect density. Interestingly, optimization of the buffer’s carrier concentration suppressed the barrier height and accumulation of charge carriers at the absorber/buffer interface, leading to efficiencies of 18.81%, 17.17%, 20.6%, 20.85%, 20.08% in MgS, CaS, SrS, BaS, and CdS-based solar cells respectively. Upon optimizing Ag2BaTiSe4, MoSe2, and interface defects maximum efficiency of > 28% is achieved with less VOC loss (~ 0.3 V) in all solar cells at absorber’s thickness, carrier concentration, and defect density of 1 µm, 1018 cm−3, 1015 cm−3 respectively, underscoring the promising nature of Ag2BaTiSe4 absorber and new alkaline earth metal chalcogenide buffers in photovoltaics.

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Section: Device Structure and Methodsmentioning

confidence: 99%

Section: Device Structure and Methodsmentioning

confidence: 99%

Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Arockiya Dass,

Hossain,

Marasamy

2024

Sci Rep

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“…This innovative process incorporates spin-coating deposition technology, enabling the creation of oxide thin films under ambient temperature and pressure conditions. This approach notably lowers both the production costs and the time required for processing [24,25]. Furthermore, given the study's reliance on an optical inspection method, there is a deliberate effort to increase the thickness of the film.…”

Section: Thin Film Preparationmentioning

confidence: 99%

Micro-Spectrometer-Based Interferometric Spectroscopy and Environmental Sensing with Zinc Oxide Thin Film

Tsai,

Hsu,

Yang

et al. 2024

Micro

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This study introduces a novel approach for analyzing thin film interference spectra by employing a micro-spectrometer equipped with a spectral chip. Focusing on zinc oxide (ZnO) thin films prepared via the sol–gel method, this research aims to explore the films’ physical properties through spectral analysis. After obtaining the interference spectrum of the ZnO thin films, the peak positions within the spectrum were cataloged. Mathematical simulation was used to adjust the refractive index and thickness of the films to match the simulated interference peak positions with the observed peak positions. The thickness of the prepared ZnO film was estimated to be 4.9 μm and its refractive index at 80 °C was estimated to be 1.96. In addition, the measurement system was used to detect environmental changes, including temperature changes and gas exposure. It was observed that the optical characteristics of ZnO films exhibit marked variations with temperature shifts, enabling the establishment of a temperature calibration curve based on spectral feature displacement. In addition, experiments using a variety of gases showed that NO2 and gaseous isopropanol significantly affect the interference spectrum of ZnO, with the peak of the interference spectrum shifted by 2.3 nm and 5.2 nm, respectively, after injection of the two gases. This indicates that interferometric spectroscopy can serve as an effective tool for ZnO monitoring, capable of selectively detecting specific gases.

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“…Additionally, a 50 nmthick buffer layer of cadmium sulfide (CdS) was produced, employing a chemical bath technique [21]. The transparent conductive oxide (TCO) layer comprised two sequential layers: firstly, a 50 nm-thick intrinsic zinc oxide (i-ZnO) layer, succeeded by a 100 nm-thick layer of aluminum-doped zinc oxide (ZnO: Al) [22]. Finally, the front contact was established by depositing a Ni/Al metallic contact through e-beam evaporation.…”

Section: Device Fabricationmentioning

confidence: 99%

Unravelling the intricacies of selenization in sequentially evaporated Cu(In,Ga)Se₂ Thin film solar cells on flexible substrates

Regmi,

Rijal,

Velumani

2023

Phys. Scr.

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This study aimed to fabricate copper indium gallium diselenide (CIGSe) thin films using a novel two-step approach. Firstly, we deposited metallic precursors (Cu/In/Ga) onto a Mo-coated stainless steel substrate using thermal evaporation at unintentional substrate temperature. Subsequently, selenization was carried out in a furnace under the presence of an inert gas. The quality of the CIGSe thin films was analyzed to explore the influence of selenization temperature (450 °C–550 °C) and duration (30 and 60 min), while maintaining an inert atmosphere inside the selenization furnace. The structural analysis revealed the progressive development of additional phases over time, resulting in the formation of a complete chalcopyrite CIGSe structure with the preferred reflection on the (112) plane. The absorber layer exhibited a thickness of 2 μm, with atomic ratios of 0.83 for Cu/(In+Ga) and 0.24 for Ga/(In+Ga) in the film selenized at 550 °C. P-type conductivity was observed in the CIGSe thin film, with a carrier concentration of up to 1017 cm−3, and it displayed a well-defined and uniform morphology characterized by a large grain size of approximately 0.9 μm. Utilizing the optimized conditions, we successfully fabricated solar cells on a flexible substrate, achieving a photoconversion efficiency of up to 9.91%. This research delves into the impact of selenization parameters on the growth of CIGSe absorber layers and introduces a new approach that could significantly influence the feasibility and industrialization of flexible solar cells.

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Impact of target power on the properties of sputtered intrinsic zinc oxide (i-ZnO) thin films and its thickness dependence performance on CISe solar cells

Cited by 18 publications

References 47 publications

Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Micro-Spectrometer-Based Interferometric Spectroscopy and Environmental Sensing with Zinc Oxide Thin Film

Unravelling the intricacies of selenization in sequentially evaporated Cu(In,Ga)Se₂ Thin film solar cells on flexible substrates

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Impact of target power on the properties of sputtered intrinsic zinc oxide (i-ZnO) thin films and its thickness dependence performance on CISe solar cells

Cited by 18 publications

References 47 publications

Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Micro-Spectrometer-Based Interferometric Spectroscopy and Environmental Sensing with Zinc Oxide Thin Film

Unravelling the intricacies of selenization in sequentially evaporated Cu(In,Ga)Se2 Thin film solar cells on flexible substrates

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Unravelling the intricacies of selenization in sequentially evaporated Cu(In,Ga)Se₂ Thin film solar cells on flexible substrates