Impact of the band–band tunneling in silicon on electrical characteristics of Al/SiO2/p+-Si structures with the sub-3 nm oxide under positive bias

“…A small hump is observed between depletion and inversion regimes at lower frequencies. This is the usual behavior of the capacitors because of a delayed response of minority carrier density to the modulation of applied bias [16]. For frequency below 80 kHz, the possibility of formation of the inversion layer is more pronounced where as for frequency above 200 kHz, the capacitances decreases with increase of bias voltage indicating the deep-depletion mode.…”

Section: Capacitance-voltage Characteristicsmentioning

confidence: 94%

Characterization of Nano Scale PMMA Films Prepared by FDC Technique for FET Applications

Shekar¹,

Sathish²,

Bhavyasree³

et al. 2013

AMR

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Poly methyl methacrylate (PMMA) thin films were prepared by fast dip coating technique (FDCT). Benzene was used as a solvent to prepare PMMA films for various time periods ranging from 60 sec. to 1 hour. The thickness of the coated films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD-20), gravimetric method and cross checked by optical spectrophotometer. FTIR spectrum was used to identify the above said coated films. XRD spectra of as grown and films annealed at various temperatures indicated the amorphous nature. Surface morphology of the coated films was studied by scanning electron microscope (SEM). No pits and pin holes were found in the surface. Both as grown and annealed films showed smooth and amorphous structure. C-V behavior of the MISM structures with Aluminum/PMMA/p-Si/Aluminum has been studied. C-V behavior for various bias voltage range of - 20 V to +20 V was provided. As grown films showed a flat band voltage (VFB) shift towards the positive voltage where as annealed films showed a decrease in VFB shift and it moved towards the zero flat band voltage (VFB  0) value. The observed surface morphology, C-V behavior and thermal stability indicated that these films could be used as effective dielectric layer in FET applications.

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“…On the other hand, as thermal generation in depletion region area is weak, only a very limited amount of electrons might be available for tunneling from the conduction band of the silicon substrate through the structure. 32 Under negative gate bias the current is not substantially affected. The reason is that current is due to majority carriers that can tunnel across all the barrier heights thanks to the electric field.…”

Section: A Current-voltage Measurementsmentioning

confidence: 99%

Germanium nanocrystal density and size effects on carrier storage and emission

Hdiy

Gacem

Troyon

et al. 2008

Journal of Applied Physics

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Impact of the band–band tunneling in silicon on electrical characteristics of Al/SiO2/p+-Si structures with the sub-3 nm oxide under positive bias

Cited by 4 publications

References 7 publications

Defect-assisted tunneling current-transport mechanism for Schottky diodes of Pt thin film on p-SiNWs tips

Defect-assisted tunneling current-transport mechanism for Schottky diodes of Pt thin film on p-SiNWs tips

Characterization of Nano Scale PMMA Films Prepared by FDC Technique for FET Applications

Germanium nanocrystal density and size effects on carrier storage and emission

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