2014
DOI: 10.1021/am503351e
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Impact of the Cation Composition on the Electrical Performance of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Abstract: This study examined the structural, chemical, and electrical properties of solution-processed (Zn,Sn)O3 (ZTO) films with various Sn/[Zn+Sn] ratios for potential applications to large-area flat panel displays. ZTO films with a Zn-rich composition had a polycrystalline wurtzite structure. On the other hand, the Sn-rich ZTO films exhibited a rutile structure, where the Zn atom was speculated to replace the Sn site, thereby acting as an acceptor. In the intermediate composition regions (Sn/[Zn+Sn] ratio from 0.28 … Show more

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Cited by 45 publications
(24 citation statements)
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“…The C i value measured at the frequency of 1 MHz was used in the μ sat calculation. The extraction method of V th and SS value can be referred elsewhere . It is noted that the μ sat value can be overestimated due to the effect of the fringing electric field because the channel region was not patterned in this study.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The C i value measured at the frequency of 1 MHz was used in the μ sat calculation. The extraction method of V th and SS value can be referred elsewhere . It is noted that the μ sat value can be overestimated due to the effect of the fringing electric field because the channel region was not patterned in this study.…”
Section: Resultsmentioning
confidence: 99%
“…The C i value measured at the frequency of 1 MHz was used in the μ sat calculation. The extraction method of V th and SS value can be referred elsewhere [14].…”
Section: Wwwpss-rapidcommentioning
confidence: 99%
“…As shown in Figure a, the nanocrystalline‐CdS (nc‐CdS) film revealed poor field‐effect mobility ( µ FE,CdS = 0.05 cm 2 V −1 s −1 ) and large threshold voltage shift in hysteresis loop (Δ V Th, Hys = 10.0 V) owing to numerous defective sites at the interface/surface of the nc‐CdS film and grain boundaries. In contrast, Sn‐eqi amorphous ZTO semiconductor (Sn‐eqi a‐ZTO) exhibited high‐performance carrier transport behavior ( µ FE, Sn‐eqi a‐ZTO = 2.5 cm 2 V −1 s −1 ) and low charge trap density‐induced narrow hysteresis loop (Δ V Th, Hys = 1.2 V) in the dark state owing to Sn‐induced effective conduction pathway, grain‐boundary‐free amorphous phase, and low Vo concentration . However, the wide optical bandgap (λ ZTO, bandgap = 335 nm) of Sn‐eqi a‐ZTO film causes direct band‐to‐band absorption of UV‐level spectral photons and introduces highly transparent optical properties over most spectral ranges of visible light (Figure b).…”
Section: Resultsmentioning
confidence: 99%
“…For this purpose, three peaks were assessed, at 530.4, 531.4 and 532.2 eV. 22 The 530.4 eV was assigned to oxygen bonded to metallic atoms, the 531.4 eV peak to oxygen vacancies and the peak at 532.2 eV to impurity-related oxygen species, such as hydroxyl groups. Table II presents the resulting data.…”
mentioning
confidence: 99%