Impact of the Ge-Si interfacial barrier on the temperature-dependent performance of PureGaB Ge-on-Si p + n photodiodes
Lovro Marković,
Tihomir Knežević,
Lis K. Nanver
et al.
Abstract:A temperature-dependent study of the near-infrared (NIR) responsivity of Ge-on-Si photodiodes is presented. The diodes, formed as n-Ge islands within oxide windows on n-Si and capped with Ga and B layers (PureGaB), exhibit low dark current of ∼2 × 10−13 A/µm2 and broadband responsivity. Temperature-dependent measurements reveal an inherent potential barrier at the low-doped n-Ge on the n-Si heterointerface. This leads to a decrease in responsivity with decreasing temperatures for wavelengths above 1100 nm. The… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.