Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices

Mallol, M.M.; González, M.B.; Campabadal, F.

doi:10.1016/j.mee.2017.05.024

Cited by 13 publications

(10 citation statements)

References 15 publications

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“…Additionally, alloy process can improve the stability of such switching. [ 99 ] Unfortunately, the prospect of HfO x as a switching material in such a subquantum design is still in mist. Further investigation in this direction can be an efficacious approach for exploring new device structures for subquantum ECM, which is regarded as the future of CBRAM for automotive applications.…”

Section: Challenges Of Hfo2 In Emerging Nonvolatile Memory Devicesmentioning

confidence: 99%

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Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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136

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Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high‐speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high‐density memory and neuromorphic devices are examined, and the various challenges of HfO2‐based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

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Section: Challenges Of Hfo2 In Emerging Nonvolatile Memory Devicesmentioning

confidence: 99%

“…In different types of RRAM devices, HfO 2 is one of the most researched switching oxide materials. [ 30–120 ] In RRAM devices, the actual resistive switching process is through filament formation or by controlling the interface. The HfO 2 is one of the established materials in CMOS domain along with SiO 2 , Al 2 O 3 , etc.…”

Section: Introductionmentioning

confidence: 99%

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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136

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“…The Ni/insulator/Si-n + devices are field-oxide isolated square structures fabricated on (100) highly doped n-type CZ silicon wafers with a resistivity of (7-13) mΩ•cm 18,19 .…”

Section: Device Fabrication and Measurementmentioning

confidence: 99%

Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides

Cazorla

Aldana

Maestro

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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An in-depth analysis including both simulation and experimental characterization of Resistive RAMs (RRAMs) with dielectric stacks composed of two layers of HfO2 and Al2O3 stacked in different order is presented. The simulator, that includes the electrodes in the simulation domain, solves the 3D heat equation and calculates the device current. The results are employed to analyze thermal effects in bilayer HfO2 and Al2O3-based RRAMs with electrodes of Ni and Si-n+ during resistive switching (RS) operation. According to our simulations and the experimental data, the narrow part of the conductive filaments (CF) is formed in the HfO2 layer in all the cases and, therefore, no important differences are found in terms of reset voltage if the oxide stack order is changed with respect to the electrodes. This result is attributed to the fact that the heat flux in the Al2O3 is higher than

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“…Rapid progress in today's semiconductor technology has made memory devices approaching their size miniaturization limits and facing the scaling issues. Polycrystalline dielectrics are usually employed as the insulator layer of RRAM and many research articles were reported in the last decade [6][7][8][9]. However, the polycrystalline structure with grains and grain boundaries is expected to limit the device downscaling when the grain size is comparable to that of the memory cell.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and current conduction mechanisms of LaGdO₃ thin film by RF sputtering for RRAM applications

Chien

Tsai

Huang

2020

Journal of Asian Ceramic Societies

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Amorphous LaGdO 3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated. The influences of Ar/O 2 ratio, film thickness, postannealing condition, and electrode on the RS properties were also studied. The conductive filaments are mostly related to the numbers of oxygen vacancies that can be controlled through a different deposition atmosphere Ar/O 2 ratio and film thickness. In addition, the RS characteristics and operating voltage can be improved by postannealing treatment. It is suggested that the In ions diffused from ITO participated in the formation of the filaments of the RRAM. The low resistance state (LRS) and high resistance state (HRS) conduction mechanism in the device were dominated by the Ohmic behavior and Schottky emission, respectively. Also, the RS characteristic is significantly affected by the potential barrier height between top electrode and LGO. The proposed RRAM exhibits unipolar resistive switching characteristic for over 400 times switching cycles and high stable retention characteristic for over 10 4 seconds with a resistance ratio (R HRS /R LRS) of around 4 orders.

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Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices

Cited by 13 publications

References 15 publications

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides

Electrical properties and current conduction mechanisms of LaGdO₃ thin film by RF sputtering for RRAM applications

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Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices

Cited by 13 publications

References 15 publications

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides

Electrical properties and current conduction mechanisms of LaGdO3 thin film by RF sputtering for RRAM applications

Contact Info

Product

Resources

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Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Electrical properties and current conduction mechanisms of LaGdO₃ thin film by RF sputtering for RRAM applications