Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

Odabasi, Oguz; Ghobadi, Amir; Ghobadi, T. Gamze Ulusoy; Unal, Yakup; Salkym, Gurur; Basar, Gunes; Bütün, Bayram; Özbay, Ekmel

doi:10.1109/led.2022.3199569

Cited by 8 publications

(2 citation statements)

References 30 publications

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“…To address these challenges, Ta/Al/Ta, Ti/Al/Ti, and Ti/Al/Ni/Au ohmic contacts, formed at a low annealing temperature below the melting point of Al at 660 • C, exhibiting better edge acuity and low R c of 0.06-0.30 Ω•mm have been demonstrated [8,[14][15][16][17]. However, R c is usually highly dependent on the barrier thickness, Al concentration, and the presence of an AlN exclusion layer.…”

Section: Introductionmentioning

confidence: 99%

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Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Chen,

Persson,

Darakchieva

et al. 2023

Semicond. Sci. Technol.

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This study presents a novel approach to forming low-resistance ohmic contacts for AlGaN/GaN HEMTs. The optimized contacts exhibit an outstanding contact resistance of approximately 0.15 Ω·mm. This is achieved by firstly recessing the barrier of the heterostructure to a depth beyond the channel. In this way, the channel region is exposed on the sidewall of the recess. The coverage of the Ti/Al/Ti ohmic metalization on the sidewall is ensured through tilting of the sample during evaporation. The annealing process is performed at a low temperature of 550 °C. The approach does not require precise control of the recess etching. Furthermore, the method is directly applicable to most barrier designs in terms of thickness and Al-concentration. The impact of recessed sidewall angle, thickness and ratio of Ti and Al layers, and the annealing procedure are investigated. Structural and chemical analyses of the interface between the ohmic contacts and epi-structure indicate the formation of ohmic contacts by the extraction of nitrogen from the epi-structure. The approach is demonstrated on HEMT-structures with two different barrier designs in terms of Al-concentration and barrier thickness. The study demonstrate large process window in regard to recess depth and duration of the annealing as well as high uniformity of the contact resistance across the samples, rendering the approach highly suitable for industrial production processes.

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Section: Introductionmentioning

confidence: 99%

“…Figure 6. Benchmark of Rc versus annealing temperature on AlxGa 1-x N/GaN (x > 0.22) HEMT epi-structures[14,15,17,18,[28][29][30][31][32][33][34].…”

mentioning

confidence: 99%

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Chen,

Persson,

Darakchieva

et al. 2023

Semicond. Sci. Technol.

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Effect of temperature dependence of 2DEG on device characteristics of field‐plated recessed‐gate III‐nitride/β‐Ga₂O₃ nano‐HEMT

Rao,

Lenka,

Nguyen

et al. 2024

Int J Numerical Modelling

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In this article, a field‐plated and recessed gate III‐Nitride Nano‐HEMT developed on β‐Ga2O3 substrate is proposed and investigated for various performance characteristics over different temperatures. The 2DEG (Two Dimensional Electron Gas) dependence on temperature is critical for commercial utilization of GaN‐based HEMTs (high electron mobility transistors). Here, the temperature influence on 2DEG for proposed HEMT over the range of 300–400 K has been investigated. The results demonstrate that the 2DEG density of proposed HEMT reduces as temperature increases. It has been observed that phonon scattering results in a sharp decline in the mobility of 2DEG as temperature increases, which causes the electric field to decrease. It also exhibited that the cut‐off frequency decreased over the temperature changes from 300 to 400 K due to diminution in electron mobility. This research aims to contribute an extensive overview of proposed III‐Nitride Nano‐HEMT designed on a lattice‐matched substrate of β‐Ga2O3 to foster future research on the latest developments in this field.

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Low-resistance TiAl3/Au ohmic contact and enhanced performance on AlGaN/GaN HEMT

Xu,

Zhang,

Yang

et al. 2024

Applied Surface Science

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Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

Cited by 8 publications

References 30 publications

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Effect of temperature dependence of 2DEG on device characteristics of field‐plated recessed‐gate III‐nitride/β‐Ga₂O₃ nano‐HEMT

Low-resistance TiAl3/Au ohmic contact and enhanced performance on AlGaN/GaN HEMT

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Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

Cited by 8 publications

References 30 publications

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Effect of temperature dependence of 2DEG on device characteristics of field‐plated recessed‐gate III‐nitride/β‐Ga2O3 nano‐HEMT

Low-resistance TiAl3/Au ohmic contact and enhanced performance on AlGaN/GaN HEMT

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Product

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Effect of temperature dependence of 2DEG on device characteristics of field‐plated recessed‐gate III‐nitride/β‐Ga₂O₃ nano‐HEMT