Impact of the Series Resistance in the I-V Characteristics of Junctionless Nanowire Transistors and its dependence on the Temperature

Abstract

The effect of the source/drain parasitic resistance (RS) on the I-V characteristics of Junctionless Nanowire Transistors (JNTs) has been evaluated through experimental and simulated data. The impact of several parameters such as the temperature, the fin width, the total doping concentration, the source/drain length and the source/drain doping concentration on RS has been addressed. The source/drain parasitic resistance presented by JNTs was compared to the one presented by classical inversion mode (IM) triple gate devices, showing opposite behavior with the temperature variation in IM triple transistors and JNTs. In the latter, a reduction on RS is noted with the temperature increase, which is related to the incomplete ionization. This effect inhibits the presence of a Zero Temperature Coefficient (ZTC) operation bias in the Junctionless devices.

Low-Temperature Solution-Processed Flexible Solar Cells Based on (In,Ga)N Nanocubes

“…The sample also exhibited the highest mobility, as it shows the lowest resistivity compared to the other samples. Conversely, higher R S presented by other samples reflect lower doping concentrations. , The fabricated p-n InGaN/PET homojunction structure suggests a distinctive model for an InGaN nanostructured films on flixible substrate-based solar cell. This novel approach is an important breakthrough in the development of InGaN-nano particles based full-solar-spectrum photovoltaic success in fabricating InGaN nanoparticles flexible solar cell, Figure d.…”

“…Conversely, higher R S presented by other samples reflect lower doping concentrations. 38,39 The fabricated p-n InGaN/PET homo- In conclusion, In x Ga 1−x N nanocubes were synthesized by disolving In(acac) 3 and Ga(acac) 3 in oleylamine at 90 °C. This approach allowed the control of indium content as confirmed by the XRD diffraction spectra, which showed the successful fabrication of InGaN with different In mole fractions without phase separation.…”

Triple-gate junctionless MOSFETs

“…The series resistance decreases linearly with temperature, while for T  100 o C the series remains constant at about 2730 m. Since the doping concentration of the source/drain regions is high (10 20 cm -3 ), the dopant ionization is expected to be complete [126] and the observed decrease of R sd with increasing temperature can be attributed to the Schottky behaviour of the contact resistance [62], [100]. The decrease of the Schottky barrierheight with increasing temperature can explain the reduction of R sd with temperature [127].…”

“…After determining the constant value of the total resistance R tot at V g = 5 V for different channel lengths, the R sd value can be estimated from the intercept of the linear extrapolation of the R tot versus gate length L plot [194]. The extracted constant values of (1/qN d )(2L sd /H fin W fin ) [126], where q is the elementary charge,  is the electron mobility and L sd is the source/drain length. The RDF effect has a serious impact on the performance of nanoscale JL TG MOSFETs [160], which is more serious as compared to conventional TG MOSFETs [195].…”

Operação e modelagem de transistores MOS sem junções.

“…Isolando V GS em (4.13), pode-se obter: propósito de uma simples comparação. Os dispositivos medidos apresentam uma severa degradação em sua curva de corrente devido à resistência série, que é da ordem de centenas de kΩ 46,43 . Esta resistência aumenta quando a temperatura é reduzida devido à ionização incompleta dos portadores 43 .…”