Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

Kou, Jianquan; Shen, Chien Chang; Shao, Hua; Che, Jiamang; Hou, Xu; Chu, Chunshuang; Tian, Kangkai; Zhang, Yonghui; Zhang, Zi Hui; Kuo, Hao‐Chung

doi:10.1364/oe.27.00a643

Cited by 138 publications

(93 citation statements)

References 28 publications

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“…Our numerical calculations show that the current can be more laterally confined into the mesa, which therefore reduces the hole consumption by surface nonradiative recombination. The reduced surface nonradiative recombination also helps to facilitate the hole injection according to our previous report [18]. Furthermore, the thinned quantum barriers homogenize the hole distribution across the multiple quantum wells (MQWs).…”

Section: Introductionmentioning

confidence: 67%

“…For addressing the point, we here have μLEDs A, B, and C, for which the quantum barrier thicknesses, according to Table 1, are set to 6 nm, 9 nm, and 12 nm, respectively. To exclude the impact of surface recombination on the carrier distribution [18], we do not consider any traps in the mesa periphery for the investigated μLEDs. Figure 1 shows the calculated EQE and optical power in terms of the injection current density level for μLEDs A, B, and C, respectively.…”

Section: Proof Of the Better Current Confinement Within The Mesa Regimentioning

confidence: 99%

“…Uniquely for μLEDs, the surface recombination at defected regions can significantly reduce the internal quantum efficiency (IQE) for μLEDs [17]. Recently, Kou et al further find that as the chip size decreases, holes are more easily trapped by the defects and the hole injection capability can become even worse for μLEDs with decreasing chip size [18]. Thus, it is important to reduce the sidewall defect density.…”

Section: Introductionmentioning

confidence: 99%

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Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

et al. 2020

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Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be correspondingly enhanced, which therefore further limits the carrier injection and the external quantum efficiency (EQE). In this work, we suggest reducing the nonradiative recombination rate at sidewall defects by managing the current spreading effect. For that purpose, we properly reduce the vertical resistivity by decreasing the quantum barrier thickness so that the current is less horizontally spreaded to sidewall defects. As a result, much fewer carriers are consumed in the way of surface nonradiative recombination. Our calculated results demonstrate that the suppressed surface nonradiative recombination can better favor the hole injection efficiency. We also fabricate the μLEDs that are grown on Si substrates, and the measured results are consistent with the numerical calculations, such that the EQE for the proposed μLEDs with properly thin quantum barriers can be enhanced, thanks to the less current spreading effect and the decreased surface nonradiative recombination.

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Section: Introductionmentioning

confidence: 67%

Section: Proof Of the Better Current Confinement Within The Mesa Regimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

et al. 2020

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“…Such recombination will consume a large number of free carriers, giving rise to the reduced electrical conductivity and the increased on‐resistance. [ 22 ] To avoid the current crowding at the mesa edges, quasi‐vertical GaN‐based PIN diodes utilize the insulating layer on the periphery for the mesas so that current will be kept apart from the mesa edges. This design is effective in reducing the current crowding at the mesa edges.…”

Section: Introductionmentioning

confidence: 99%

Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction

Liu

Jia

Zhang

et al. 2020

Physica Status Solidi (a)

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GaN‐based quasi‐vertical PIN diodes are grown on insulating sapphire substrates, and thus both the n‐electrode and the p‐electrode are made on the same side, which causes lateral current injection scheme. Therefore, one of the challenges for this design lies in the serious current crowding at the mesa edges, which leads to the local hole accumulation, and thus the Auger recombination significantly gives rise to the poor conductivity modulation in the drift region when the devices are forwardly biased. Herein, utilizing an embedded PN–GaN junction is proposed, such that the embedded PN–GaN junction is reversely biased when the PIN diode is in the on‐state condition. The built‐in electric field in the reversely biased PN–GaN junction depletes holes at the mesa edges, and correspondingly the Auger recombination can be decreased. The results also show that the proposed structures do not affect the breakdown voltage for PIN diodes.

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“…In this study, we simulated GaAs VCSEL; of course, it also expanded easily to GaN VCSEL, LED, etc. [15,16].…”

Section: Introductionmentioning

confidence: 99%

Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

et al. 2019

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We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.

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Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

Cited by 138 publications

References 28 publications

Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction

Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

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