Impact of transistor reliability on RF oscillator phase noise degradation

Reddy, V.; Barton, N.; Martin, Samuel P.; Hung, Chih‐Ming; Krishnan, A.T.; Chancellor, C.; Sundar, Srividya; Tsao, A.; Corum, D.; Yanduru, N.K.; Srinivasan, Madhavi; Akhtar, S.; Pathak, Nagendra Prasad; Srinivasan, P.; Shichijo, Sam; Benaissa, K.; Roy, Anirban; Chatterjee, Tanmay; Taylor, Richard; Krick, J.; Brighton, J.E.; Ondrusek, J.C.; Barry, D.M.; Krishnan, S.

doi:10.1109/iedm.2009.5424341

Cited by 9 publications

(3 citation statements)

References 3 publications

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“…8 that the measured phase noise at low offset frequency has a negative slope of 30 dBc/dec, indicating 1/f noise is up-converted with other white noise from different noise sources in the circuit. Similar 1/f noise up-conversion subjected to hot electron effect of n-channel VCO was observed recently [21]. In our work, the NBTI effect on the phase noise degradation of current reused CMOS VCO is also included.…”

Section: Rf Stress Experimentsmentioning

confidence: 64%

“…For practical circuit operation, VCOs and power amplifiers are operating under large-signal RF excitation. Although hot electron effect on VCO performance has been examined in n-channel VCOs [19,21], the NBTI effect on the current reused VCO, which consists of both the nchannel and p-channel transistors, has not been examined by experiment. This motivates us this study.…”

Section: Introductionmentioning

confidence: 99%

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RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments

Yen

Yuan

Wang

et al. 2012

Microelectronics Reliability

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Section: Rf Stress Experimentsmentioning

confidence: 64%

Section: Introductionmentioning

confidence: 99%

RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments

Yen

Yuan

Wang

et al. 2012

Microelectronics Reliability

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“…However, some significant work also addresses analog circuit performance degradation. A very little attention, however, has been paid to radio-frequency circuits [5][6][7][8]. However, no dedicated study has been done on the performance degradation of a LNA in an advanced technology node such as 28nm.…”

Section: Introductionmentioning

confidence: 99%

Impact of transistor aging on RF low noise amplifier performance of 28nm technology: Reliability assessment

Mahato

Gielen

2013

2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)

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Transistor reliability has become one of the major concerns in reliable circuit design in advanced CMOS nanometer technology. Transistor aging can have a significant impact on the performance of the RF frontend circuits. In this paper, the impacts of transistor aging on a RF low noise amplifier (LNA) are studied. In this work, single-ended cascode LNA with source inductive degeneration and LC folded-cascode LNA test circuits are used to study the transistor aging effect. The noise figure (NF) and the gain, critical performance parameters of a LNA are shown to be degradation-sensitive. It is shown that the noise figure of the LNA is significantly increased and the gain of the LNA is decreased by the aging effect using a 28nm technology. The optimum gate bias point and the cascode structure have been shown as design guidelines to make the LNA more reliable.I.

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Voltage-Controlled Oscillator Reliability

Yuan

2016

CMOS RF Circuit Design for Reliability and Variability

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Impact of transistor reliability on RF oscillator phase noise degradation

Cited by 9 publications

References 3 publications

RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments

RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments

Impact of transistor aging on RF low noise amplifier performance of 28nm technology: Reliability assessment

Voltage-Controlled Oscillator Reliability

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