Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results

Steiner, Johannes; Arzig, Matthias; Denisov, Alexey; Wellmann, Peter J.

doi:10.1002/crat.201900121

Cited by 14 publications

(9 citation statements)

References 33 publications

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“…For this reason, numerical modeling is used to further characterize the hot zone during and after crystal growth, considering temperature fields of the crystal and source powder [ 24 , 25 , 26 ], mass transport [ 27 , 28 , 29 ], stress and growth kinetics [ 30 , 31 ], or dislocation dynamics [ 32 , 33 ]. However, to the knowledge of the authors, the impact of the change in CTE caused by nitrogen doping on stress was not yet investigated numerically.…”

Section: Introductionmentioning

confidence: 99%

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Steiner

Wellmann

2022

Materials

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Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress during physical vapor transport (PVT). The impact of the nitrogen-doping concentration during the initial phase of PVT growth of 4H-SiC was investigated using molten potassium hydroxide (KOH) etching, and the doping concentration and stress was detected by Raman spectroscopy. The change in the coefficient of thermal expansion (CTE) caused by the variation of nitrogen doping was implemented into a numerical model to quantitatively determine the stress induced during and after the crystal growth. Furthermore, the influence of mechanical stress related to the seed-mounting method was studied. To achieve this, four 100 mm diameter 4H-SiC crystals were grown with different nitrogen-doping distributions and seed-mounting strategies. It was found that the altered CTE plays a major role in the types and density of defect present in the grown crystal. While the mounting method led to increased stress in the initial seeding phase, the overall stress induced by inhomogeneous nitrogen doping is orders of magnitude higher.

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Section: Introductionmentioning

confidence: 99%

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Steiner

Wellmann

2022

Materials

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“…In order to evaluate the growth conditions in the crucible, numerical simulation is the tool of choice [5,6,7,8]. One problem for the modeling of the growth conditions of bulk SiC is the lack of precise material data at elevated temperatures [9]. Another difficulty is accounting for the changes that happen inside the crucible during the growth process.…”

Section: Introductionmentioning

confidence: 99%

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

et al. 2019

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In this study, the change of mass distribution in a source material is tracked using an in situ computer tomography (CT) setup during the bulk growth of 4H- silicon carbide (SiC) via physical vapor depostion (PVT). The changing properties of the source material due to recrystallization and densification are evaluated. Laser flash measurement showed that the thermal properties of different regions of the source material change significantly before and after the growth run. The Si-depleted area at the bottom of the crucible is thermally insulating, while the residual SiC source showed increased thermal conductivity compared to the initially charged powder. Ex situ CT measurements revealed a needle-like structure with elongated pores causing anisotropic behavior for the heat conductivity. Models to assess the thermal conductivity are applied in order to calculate the changes in the temperature field in the crucible and the changes in growth kinetics are discussed.

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“…In our model, the thermal field was calculated by taking the Joule heating, heat conduction, heat radiation and heat convection into consideration. The temperature field is determined based on the law of conservation of energy [7,8]:…”

Section: Methodsmentioning

confidence: 99%

200 mm silicon carbide bulk growth optimisation: mass transport controlled by a designed gas deflector

Tan¹,

Kang²,

Yin³

et al. 2022

Phys. Scr.

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200-mm silicon carbide bulk growth would be the mainstream in industrial production, but the difficulty of multiple physical fields control is increased with the larger diameter. In this study, a resistance heating based physical vapour transport system was established and explored for its appropriate parameters of multiple physical fields (such as thermal, velocity, flux and reaction components fields) by the COMSOL simulation. A combination of pressure at 5 torr and seed temperature of 2340 K was gained by taking the rate and homogeneity of in-plane growth into consideration. Furthermore, a gas deflector was designed to decrease the convection and to improve the homogeneity of mass transport. This gas deflector had the ability to enhance the quality and yield of 200-mm SiC crystal bulk. A high yield of 90.1 % was achieved for the 200-mm part within the crystal thanks to this deflector (without the usage of the deflector was 38.5 %). This work provides a useful tool and insights into the steps required for the optimisation of 200-mm or larger size SiC bulk growth.

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Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results

Cited by 14 publications

References 33 publications

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

200 mm silicon carbide bulk growth optimisation: mass transport controlled by a designed gas deflector

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