Impact of ZnO Cap Layer on the Performance of MgZnO/CdZnO Heterostructure With YO Spacer Layer<sub />
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Kumar, Pawan; Chaudhary, Sumit; Khan, Arif; Singh, Ruchi; Htay, Myo Than; Prajesh, Rahul; Agarwal, Ajay; Mukherjee, Shaibal

doi:10.1109/ted.2022.3206172

Cited by 2 publications

(4 citation statements)

References 31 publications

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“…Figure 4(a) depicts the temperature-dependent twodimensional electron concentration (n s ) and mobility (µ) of MCO heterostructures with Y 2 O 3 spacer and ZnO cap layer. The inclusion of the spacer layer is instrumental in boosting mobility by mitigating dislocation lines within the buffer layer [9]. Furthermore, the presence of the ZnO cap layer contributes to enhancing mobility by reducing interface charge density and suppressing carrier scattering [9].…”

Section: Resultsmentioning

confidence: 99%

“…The inclusion of the spacer layer is instrumental in boosting mobility by mitigating dislocation lines within the buffer layer [9]. Furthermore, the presence of the ZnO cap layer contributes to enhancing mobility by reducing interface charge density and suppressing carrier scattering [9]. Notably, there is minimal variation in n s and µ across the temperature range of 100-300 K. This lack of significant change suggests that carriers do not freeze at lower temperatures, thereby confirming that the observed carrier concentration is not a result of thermal activation of the bulk material but rather stems from the formation of a two-dimensional electron gas (2DEG) [1].…”

Section: Resultsmentioning

confidence: 99%

“…two-dimensional electron gas (2DEG) density along with the high conductance [1][2][3][4][5][6][7]. Khan and Kumar et al [8,9] have reported, the MgZnO/CdZnO (MCO) heterostructure is also promising structure for HFET application due to higher 2DEG (∼10 14 cm −2 ), high conductance (∼10 15 V −1 s −1 ), low sheet resistance (131 Ω), and high drain current density (∼400 mA mm −1 ). Gate leakage current also plays a significant role in assessing the performance of MOSHFETs.…”

Section: Introductionmentioning

confidence: 99%

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Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET

Kumar,

Mahapatra,

Chaudhary

et al. 2024

Semicond. Sci. Technol.

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This study focuses on a cost-effective method for fabrication of a metal oxide semiconductor-heterostructure field effect transistor (MOSHFET) based on MgZnO/CdZnO (MCO) using dual ion beam sputtering (DIBS), in contrast to the more expensive epitaxial growth system. The MOSHFETs developed in this research exhibit notable characteristics, such as a such as a substantial two-dimensional electron gas (2DEG) transconductance (~2.6 mS), a high ION/IOFF response ratio in the order of 108, and minimal gate leakage current. Furthermore, we explore the impact of rapid thermal annealing (RTA) on the drain current at various temperatures (600 and 800 ℃). The results indicate a fourfold improvement in drain current compared to unannealed conditions, primarily attributed to reduced contact resistance and no degradation in term of MgZnO/CdZnO structure. Additionally, an analysis of post-RTA treatment under a nitrogen (N2) atmosphere on gate leakage current is presented. The investigation spans temperatures ranging from 400 to 800 ℃, revealing that above 600 ℃ (gate leakage at 400 to 600 ℃ is around ~10-9 A), gate leakage in HFET is augmented by one order of magnitude (~10-8 A) due to a phase change in the dielectric. These findings underscore the feasibility of DIBS-grown MCO MOSHFETs as an economical solution for the mass production of switching devices and sensors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET

Kumar,

Mahapatra,

Chaudhary

et al. 2024

Semicond. Sci. Technol.

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“…Kumar et al found the effect of ZnO cap layer on the mobility, carrier density, and conductivity of MgZnO/CdZnO (MCO) heterostructures grown by double ion beam sputtering. The 30 nm ZnO cap layer enhanced the mobility by 2.3 times, which was significant for realizing an MCO-based heterogeneous field effect transistor (HFET) for a large area.…”

Section: Applications Of P-znomentioning

confidence: 99%

ZnO with p-Type Doping: Recent Approaches and Applications

Yang,

Wang,

et al. 2023

ACS Appl. Electron. Mater.

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ZnO is a significant semiconductor material with the characteristics of direct band gap, large exciton binding energy, and easy growth of high-quality nanostructures, and it is widely used in various fields. However, obtaining high-quality p-type ZnO has become a significant obstacle to the wide application of ZnO. The research on p-ZnO started several decades ago and is regarded as the research focus. Many researchers have obtained high-quality p-ZnO by chemical vapor deposition (CVD) and physical vapor deposition (PVD). To obtain high-quality p-ZnO, researchers have used some “better” techniques to improve the crystal quality and mobility of p-ZnO, such as molecular beam epitaxy (MBE) and post-treatment. This review provides an overview of some methods for obtaining high-quality p-ZnO, such as increasing the acceptor concentration, shallowing acceptor energy levels, and reducing donor defects. In addition, we also review the applications of p-ZnO in LEDs, UV detectors, thin-film transistors, gas sensing, bionic materials, and other fields.

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Impact of ZnO Cap Layer on the Performance of MgZnO/CdZnO Heterostructure With YO Spacer Layer

Cited by 2 publications

References 31 publications

Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET

Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET

ZnO with p-Type Doping: Recent Approaches and Applications

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Impact of ZnO Cap Layer on the Performance of MgZnO/CdZnO Heterostructure With YO Spacer Layer

Cited by 2 publications

References 31 publications

Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET

Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET

ZnO with p-Type Doping: Recent Approaches and Applications

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Product

Resources

About

Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET

Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET