Impact on Off-state Leakage Current in PMOS Device by Metallic Contamination

You, Young Seon; Kim, Nam Sung; Lu, Dai-Rong; Leong, Amy; Yew, Wong Wing; Woo, Kah Chin; Mok, T.S.; Shukla, Devarshi; Mukhopadhyay, Mrinmay K.; Pey, Kin San

doi:10.1109/issm.2006.4493054

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Cited by 2 publications

(3 citation statements)

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“…It was found that metallic contaminations significantly increase the off-state current. 21 Overall, the I-V curves shown here clearly show functional devices. …”

Section: Resultsmentioning

confidence: 61%

“…21 Moreover, based on previous measurements of leakage currents, it is well accepted that the incorporation of carbon into the silicon lattice is not of a major concern.…”

Section: Resultsmentioning

confidence: 99%

“…Iyengar et al 20 and Tang et al 21 have reported the application of SOD for the development of photovoltaic devices. In their work, the SOG is used not only as the dopant source but also as an anti-reflection coating or passivation layer.…”

Section: Spin-on Dopingmentioning

confidence: 99%

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Molecular monolayers for doping silicon : from doping dose control to device application

Liang

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“…It was found that metallic contaminations significantly increase the off-state current. 21 Overall, the I-V curves shown here clearly show functional devices. …”

Section: Resultsmentioning

confidence: 61%

“…21 Moreover, based on previous measurements of leakage currents, it is well accepted that the incorporation of carbon into the silicon lattice is not of a major concern.…”

Section: Resultsmentioning

confidence: 99%