Impacts of channel film thickness on poly-Si tunnel thin-film transistors

Cheng-Yu, William; Hsu, Hui-Shun; Fang, Chih-Cheng; Jao, Che-Yu; Liao, Tzu-Han

doi:10.1016/j.tsf.2018.02.026

Cited by 9 publications

(6 citation statements)

References 18 publications

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“…For channeling materials, silicon is the most commonly used because of its low manufacturing cost, mature manufacturing process, and high-cost performance, but its lower electron mobility and inadequate current drive ability. 6 In recent years, indium gallium zinc oxide (IGZO) TFT was of high concern because of many advantages, such as high carrier mobility, good large-area manufacturing uniformity and flexibility and transparency. 2 However, its manufacturing process is not compatible with the traditional complementary metal-oxide-semiconductor transistor (CMOS) process, which leads to high preparation cost.…”

Section: Introductionmentioning

confidence: 99%

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions

Liao

Xie

Xiao

et al. 2021

Surface & Interface Analysis

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MgO and SiO2 are the natural oxide layer on the surface of Mg2Si and the excellent gate dielectric layer materials. MgO/Mg2Si and SiO2/Mg2Si heterojunctions were successfully prepared by magnetron sputtering. The valence band offset (VBO) and conduction band offset (CBO) of the two heterojunctions were measured by X‐ray photoelectron spectroscopy (XPS) method, and the values were 2.64 and 3.90 eV for MgO/Mg2Si and 3.24 and 4.43 eV for SiO2/Mg2Si, respectively. Different degree of band bending occurs on the two interfaces. As a result, the band diagrams of the both interfaces are all Type‐I (Straddled) band alignment. Such high VBO and CBO can provide suitable barrier heights for both electrons and holes (>1 eV); therefore, both MgO and SiO2 can be suitable candidates for the preparation of Mg2Si‐based thin film transistors.

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Section: Introductionmentioning

confidence: 99%

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions

Liao

Xie

Xiao

et al. 2021

Surface & Interface Analysis

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“…However, the grain size is also strongly influenced by film thickness. [29][30][31] Once the poly-Si thickness is determined, the enlargement of grain size is not obvious, even if the thickness of α-Si thin film deposited using Si 2 H 6 is much thicker than that deposited using SiH 4 for the 3(Si 2 H 6 ):5(SiH 4 ) case. It is therefore seen that compared to SiH 4 only, the addition of Si 2 H 6 into SiH 4 i.e.…”

Section: S/c Properties Of Poly-simentioning

confidence: 99%

Influence of Polysilicon Deposition Conditions on Advanced 3D NAND

Zhang

Bing-guo²,

Li³

et al. 2019

ECS J. Solid State Sci. Technol.

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As the conductive channel, undoped channel hole polysilicon (poly-Si) plays a significant role in 3D NAND. Two important properties i.e. grain size and step coverage (S/C) of undoped channel hole poly-Si have attracted great attentions in practical manufacturing. The grain size affects the mobility of conductive poly-Si film and large grain size usually leads to high mobility. The step coverage influences the subthreshold swing (SS) and improved step coverage leads to small SS. In this paper, during the growth of poly-Si, the influence of different deposition conditions, such as temperature and gas source ratio between Si2H6 and SiH4, on the grain size and step coverage is investigated comprehensively. Grain size and step coverage are characterized using by Transmission Electron Microscope (TEM) and Precession Electron Diffraction (PED). It is found that as the decrease of deposition temperature, both the grain size and step coverage are improved. Compared to gas source SiH4, the employment of Si2H6 is beneficial in achieving large grain size to some degree and no further improvement can be obtained when the flow of Si2H6 is increased to a certain value. However, as-deposited poly-Si exhibits poorer step coverage using Si2H6 in contrast to SiH4.

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“…The closer the gate electrodes, the stronger the coupling of gate fields is [12]. The gate coupling is helpful in increasing on-current, decreasing subthreshold swing, and countering short-channel effects (SCEs) [13,14]. However, scaling T b also causes other effects because the tunneling occurs within the body and its rate depends on the potential profile which is partially determined by T b .…”

Section: Introductionmentioning

confidence: 99%

Thin-body effects in double-gate tunnel field-effect transistors

Chien,

Thai,

Shih

2024

J. Phys. D: Appl. Phys.

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Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TFETs as Tb is scaled down. Differently from previous beliefs, the on-current degradation in thin-body DG-TFETs is not mainly caused by the volume effect, but rather by a newly defined TBE named lateralization effect. This is because the lateralization of tunneling direction significantly increases tunnel width, whereas the reduction of tunneling volume is quite limited due to narrow tunneling regions. To study the Tb-dependence of current, therefore, the vertical tunneling has to be taken into consideration. When considered as a TBE, the fringing field effect caused by reduction in Tb is not significant in degrading the on-current of thin-body DG-TFETs because the narrow tunneling regions are strongly gate-controlled. The only TBE that enhances the on-current is the coupling effect, but its role is only significant for low-bandgap bodies in which the coupling effect can efficiently promote the tunneling towards the body center. Not as previously thought that the quantum confinement effect (QCE) monotonically increased, it even decreases as Tb decreases down to sub-10 nm before turning to increase, thanks to the space sharing between proximate local quantum wells. A comprehensive understanding of the TBEs is useful for providing design insight, especially for determining the optimal Tb to maximize the on-current.

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Impacts of channel film thickness on poly-Si tunnel thin-film transistors

Cited by 9 publications

References 18 publications

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions

Influence of Polysilicon Deposition Conditions on Advanced 3D NAND

Thin-body effects in double-gate tunnel field-effect transistors

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Impacts of channel film thickness on poly-Si tunnel thin-film transistors

Cited by 9 publications

References 18 publications

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg2Si and SiO2/Mg2Si heterojunctions

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg2Si and SiO2/Mg2Si heterojunctions

Influence of Polysilicon Deposition Conditions on Advanced 3D NAND

Thin-body effects in double-gate tunnel field-effect transistors

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Product

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X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions

X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg₂Si and SiO₂/Mg₂Si heterojunctions