Impacts of Cu contamination in 3D integration process on memory retention characteristics in thinned DRAM chip

Lee, Kangwook; Tanikawa, Seiya; Naganuma, H.; Bea, J. C.; Murugesan, M.; Fukushima, T.; Tanaka, Tetsu; Koyanagi, Mitsumasa

doi:10.1109/irps.2014.6860634

Cited by 8 publications

(2 citation statements)

References 17 publications

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“…Lee et al examined copper contamination of the backside grinding process used in thin MOS-FET device fabrication. They made evaluated by MOS capacitance generation-recombination lifetime measurements and found that the copper impurities in-diffuse into the device active region during the backside grinding process and CMP process [9,56,57,58]. Copper impurities then form deep-energy level defects in the silicon band-gap.…”

Section: Gettering Technology Design For Back-side-illuminated Cmomentioning

confidence: 99%

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kurita

Kadono

Shigematsu

et al. 2019

Sensors

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We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

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Section: Gettering Technology Design For Back-side-illuminated Cmomentioning

confidence: 99%

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kurita

Kadono

Shigematsu

et al. 2019

Sensors

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“…In addition, during the fabrication of BSI-based 3D stacked CMOS image sensors, the device Si wafer must be thinned by mechanical grinding and chemical mechanical polishing (CMP). The thin-wafer fabrication process has a risk of degradation of the electrical performance of the CMOS image sensor owing to easy metallic impurity contamination into the active region of the photodiode [ 6 , 7 , 8 ]. Therefore, the fabrication process of 3D-stacked BSI image sensors has many chances for metallic impurities to be introduced compared with that of conventional front-side illuminated (FSI) image sensors.…”

Section: Introductionmentioning

confidence: 99%

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Onaka‐Masada

Kadono

Okuyama

et al. 2020

Sensors

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The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown silicon substrate. This considerable reduction in white spot defects on the C3H6-ion-implanted double epitaxial silicon wafer may be due to the high gettering capability for metallic contamination during the device fabrication process and the suppression effects of oxygen diffusion into the device active layer. In addition, the defects with low internal oxygen concentration were observed in the C3H6-ion-implanted region of the double epitaxial silicon wafer after the device fabrication process. We found that the formation of defects with low internal oxygen concentration is a phenomenon specific to the C3H6-ion-implanted double epitaxial wafer. This finding suggests that the oxygen concentration in the defects being low is a factor in the high gettering capability for metallic impurities, and those defects are considered to directly contribute to the reduction in white spot defects in CMOS image sensor pixels.

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TSV Characteristics and Reliability: Impact of 3D Integration Processes on Device Reliability

Lee

Koyanagi

2015

Three-Dimensional Integration of Semiconductors

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Impacts of Cu contamination in 3D integration process on memory retention characteristics in thinned DRAM chip

Cited by 8 publications

References 17 publications

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

TSV Characteristics and Reliability: Impact of 3D Integration Processes on Device Reliability

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