Impacts of plasma process-induced damage on MOSFET parameter variability and reliability

Eriguchi, Koji; Ono, Ken

doi:10.1016/j.microrel.2015.07.004

Cited by 23 publications

(11 citation statements)

References 38 publications

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“…It was reported that latent defects induce the parameter variation and performance degradation of MOSFETs. [40][41][42][43] The PPD range theory 13) describes the above mechanisms. The theory clarifies that d dam and the defect density n dam of the final damaged structure are strong functions of E ion as expressed by…”

Section: Process Time Dependence Of Damaged Structure Formation In Si...mentioning

confidence: 99%

Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas

Hamano

Eriguchi

2018

Jpn. J. Appl. Phys.

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The effect of ion flux on the formation of a damaged layer in a Si substrate was investigated in detail. An inductively coupled plasma source was used to control the flux (Γ ion ) and energy (E ion ) of incident ions. The progressive behavior of the total damaged layer thickness (d dam ) estimated by spectroscopic ellipsometry primarily depends on the total ion dose (D ion = Γ ion ' t pr , where t pr is the process time) and E ion . The evolution of d dam then saturates and becomes independent of D ion . The characteristic total ion dose (D dam ) is defined, which distinguishes the progressive and saturation phases. Experimental results suggest that D dam is estimated to be in the range from 1 ' 10 16 to 3 ' 10 16 cm %2 , regardless of Ar and He plasmas in the present study. This D ion -dependent behavior was also confirmed by transmission electron microscopy and capacitance-voltage measurements. The interface thickness d IL of the damaged layer was found to be independent of D ion . This result confirms that d IL can be used as a measure of the E ion -dependent plasma-induced damage (PID) for in-line monitoring. The present D ion dependence can be implemented in the conventional PID range theory, particularly, in the designs of high-density plasma sources.

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Section: Process Time Dependence Of Damaged Structure Formation In Si...mentioning

confidence: 99%

Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas

Hamano

Eriguchi

2018

Jpn. J. Appl. Phys.

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“…With the aggressive shrinkage of device feature sizes in accordance with Moore's law of ultra large-scale integration (ULSI) circuits, [1][2][3][4][5][6][7][8] defect creation in materials during plasma processingplasma-induced damage (PID)has been one of the critical issues in designing present-day electronic devices. [9][10][11] PID induces not only the topological feature change [12][13][14][15][16] but also the degradation of electrical performance such as the reliability [17][18][19][20][21][22] in dielectric materials (SiO 2 , Si 3 N 4 , and low-k films) [23][24][25][26] and semiconductor materials (Si). [27][28][29] For example, plasma-induced physical damage (PPD) induced by high-energy ion bombardment is known to generate the local defect structures such as vacancies and interstitials.…”

Section: Introductionmentioning

confidence: 99%

First-principles predictions of electronic structure change in plasma-damaged materials

Yoshikawa

Eriguchi

2018

Jpn. J. Appl. Phys.

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The electronic structure change after plasma exposure in representative materials used in electronic devicescrystalline Si substrate and Si 3 N 4 filmis investigated by a first-principles approach. We prepared the starting structures of Si, α-, and β-Si 3 N 4 with various key species (Ar, Br, Cl, N, and O) in processing plasmas. We investigated the electron charge density distribution and density of state (DOS) with the interstitial species after optimizing the prepared initial structures. Model predictions showed that the interstitial species create the DOSs, and that the energy-band edge extends to the midgap. The creation of the DOSs was clearly found in the β-Si 3 N 4 structure model, while no obvious creation was obtained in the α-Si 3 N 4 structure. This creation of the DOSs is consistent with the current-voltage (I-V) characteristics of the damaged Si 3 N 4 films presumably consisting of αor β-Si 3 N 4 local structure. The distortion of the I-V curves was considered to be attributed to the creation of the DOSs, which play a role as carrier trapping/detrapping sites.

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“…Given the presence of a MOS, the thermal budget must be low to maintain dopant distribution. Plasma process-induced damage (PID) is also of concern [27]. Therefore, the ToGoFET probe tip must be carefully fabricated.…”

Section: Conductive Tip Fabricationmentioning

confidence: 99%

Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

et al. 2021

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We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The - characteristics of the inbuilt MOSFET reflect the design and fabrication modifications, and measurement of a buried electrode revealed improved ToGoFET imaging performance. The minimum measurable value was enhanced 20-fold.

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Impacts of plasma process-induced damage on MOSFET parameter variability and reliability

Cited by 23 publications

References 38 publications

Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas

Incident ion dose evolution of damaged layer thickness in Si substrate exposed to Ar and He plasmas

First-principles predictions of electronic structure change in plasma-damaged materials

Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

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