Impacts of thermal stress and doping on intrinsic point defect properties and clustering during single crystal silicon and germanium growth from a melt

Vanhellemont, Jan; Kamiyama, Eiji; Nakamura, Kozo; Śpiewak, Piotr; Sueoka, Koji

doi:10.1016/j.jcrysgro.2016.12.077

Cited by 3 publications

(2 citation statements)

References 42 publications

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“…The formation entropy is included in C 0 . The critical value of the Voronkov parameter ξ = v/G corresponding to the present formulation, Equations ( 2) and ( 3), is [18,33,37]:…”

Section: Governing Equationsmentioning

confidence: 99%

Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Sabanskis

Plāte²,

Sattler³

et al. 2021

Crystals

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Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for standard and adjusted parameter sets and generally the best agreement in the whole crystal is found for models considering the effect of thermal stress on the equilibrium point defect concentration.

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“…The formation entropy is included in C 0 . The critical value of the Voronkov parameter ξ = v/G corresponding to the present formulation, Equations ( 2) and ( 3), is [18,33,37]:…”

Section: Governing Equationsmentioning

confidence: 99%

Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Sabanskis

Plāte²,

Sattler³

et al. 2021

Crystals

View full text Add to dashboard Cite

show abstract

“…In order to study the defect properties at the atomic scale, density-functional theory (DFT) calculations prove to be an effective approach. The formation energies, − migration energies, − and formation entropy of the intrinsic point defects have been calculated quantitatively through DFT previously, usually based on the widely applied generalized gradient approximation (GGA). − ,− Several researchers have realized that thermal stress might have an effect on true( V G true) normalc normalr normali normalt , and carried out theoretical studies. Sueoka et al , calculated the stress-dependent formation and migration enthalpies of vacancies and self-interstitials.…”

Section: Introductionmentioning

confidence: 99%

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Hu,

He,

Pei

et al. 2024

Crystal Growth & Design

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The distribution of intrinsic point defects, comprising vacancies and self-interstitials, plays a pivotal role in determining the quality and properties of silicon wafers, with profound implications for their applications in the semiconductor industry. Previous research posits that the dominant defect type in Czochralski (Cz) Si can be manipulated by adjusting the ratio of the pulling rate (V) to the axial thermal gradient (G). The critical value of V G establishes the equilibrium between vacancies and selfinterstitials. However, conventional theories often consider ( )to be a constant based on the assumption of thermal equilibrium.In this study, we present evidence that the formation and diffusion of the intrinsic point defects are influenced by thermal stress, rendering ( ) V G crit dependent on thermal stress distribution. Through a combination of first-principles calculations and finite element simulations, we establish a quantitative theoretical model that considers thermal stress. Based on this model, the impact of thermal stress on the defect distribution during Cz Si growth and the value of ( ) V G crit is elucidated. Our findings are validated through experimental growth of Cz Si and analytical testings. This work not only contributes to a deeper understanding of the microscopic mechanisms governing defect dynamics in Si but also advances Cz Si growth technology, ultimately enhancing the quality of the resultant Si wafers.

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Smart Design of Cz-Ge Crystal Growth Furnace and Process

et al. 2022

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The aim of this study was to evaluate the potential of the machine learning technique of decision trees to understand the relationships among furnace design, process parameters, crystal quality, and yield in the case of the Czochralski growth of germanium. The ultimate goal was to provide the range of optimal values of 13 input parameters and the ranking of their importance in relation to their impact on three output parameters relevant to process economy and crystal quality. Training data were provided by CFD modelling. The variety of data was ensured by the Design of Experiments method. The results showed that the process parameters, particularly the pulling rate, had a substantially greater impact on the crystal quality and yield than the design parameters of the furnace hot zone. Of the latter, only the crucible size, the axial position of the side heater, and the material properties of the radiation shield were relevant.

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Impacts of thermal stress and doping on intrinsic point defect properties and clustering during single crystal silicon and germanium growth from a melt

Cited by 3 publications

References 42 publications

Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Smart Design of Cz-Ge Crystal Growth Furnace and Process

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