Impacts of UV cure for reliable porous PECVD SiOC integration [IC interconnect applications]

Yoneda, Katsumi; Kato, M.; Kondo, Susumu; Kobayashi, N.; Matsuki, Nobuo; Matsushita, Kiyohiro; O'Hara, Neal; Fukazawa, A.; Kimura, Taku

doi:10.1109/iitc.2005.1499989

Cited by 7 publications

(9 citation statements)

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“…5͒. Similar to previous studies [8][9][10]12,13 the carbon content was observed to decrease with UV curing indicative of the removal of nonbridging terminal bonds such as Si-CH 3 and a subsequent formation of cross-linked Si-O-Si bonds. In addition, we noted that the carbon content of the UVx1 cured organosilicate films decreased with decreasing film thickness, suggesting that the UV cure was less effective in reducing methyl groups and increasing the glass network bonds for the thicker films.…”

Section: Resultssupporting

confidence: 86%

“…8,11 UV curing results in the removal of certain nonbridging terminal bonds such as Si-CH 3 and Si-OH and a subsequent formation of crosslinked Si-O-Si bonds. 8,10,12,13 Detailed characterization by nuclear magnetic resonance spectroscopy and Fourier transform infrared spectroscopy showed significant changes in glass structure with increasing curing time, marked by the removal of terminal organic groups and increased network forming bonds following the initial removal of a porogen material. 10 In the present study, we investigated in detail the role of UV curing time and dielectric film thickness on the mechanical and fracture properties of organosilicate thin films.…”

Section: Introductionmentioning

confidence: 99%

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Depth dependence of ultraviolet curing of organosilicate low-k thin films

Kim

Tsuji²,

Kemeling³

et al. 2008

Journal of Applied Physics

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UV radiation curing has emerged as a promising postdeposition curing treatment to strengthen organosilicate interlayer dielectric thin films. We provide the evidence of film depth dependent UV curing which has important effects on through thickness mechanical and fracture properties. Force modulation atomic force microscopy measurements of the elastic modulus through the thickness of the films revealed evidence of periodic modulations of the glass stiffness which increased in magnitude with UV curing time. Furthermore, while significant increases in fracture energy were observed with UV curing time at the top of the organosilicate film, much lower increases were observed at the bottom. The increase in fracture energy with UV curing was film thickness dependent. The cohesive fracture resistance was less sensitive to UV curing. Possible explanations for the stiffness modulations through the film thickness involving UV light interference or phase separation by spinodal decomposition during the cure process are described.

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Section: Resultssupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Depth dependence of ultraviolet curing of organosilicate low-k thin films

Kim

Tsuji²,

Kemeling³

et al. 2008

Journal of Applied Physics

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“…In order to address these weaknesses, thermally assisted e-beam and ultraviolet (UV) curing processes were auditioned. The goal was to facilitate the complete porogen removal at temperatures ≤400 °C and to boost mechanical properties as a result of the known hardening effect of these treatments [64][65][66][67][68][69].…”

Section: Post-deposition Treatmentsmentioning

confidence: 99%

Low‐kMaterials: Recent Advances

Dubois¹,

Volksen²

2012

Advanced Interconnects for ULSI Technology

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“…It is well-known that UV irradiation of p-SiOC material decreases the number of CH 3 groups, increases the number of Si-H bonds, and changes the Si-O-Si network. 4) In a previous paper, taking account of changes in the numbers of CH 3 groups and Si-H bonds only, we reported some results on IR-spectral changes due to increased number of CH 3 -groups after UV curing. In the present study, paying attention to generation of Si-O-Si bonds (Si-O-Si cross links), we thoroughly investigated UV curing mechanisms.…”

mentioning

confidence: 95%

“…3) The material is formed by plasma-enhanced chemical-vapor deposition. 4) The calculated structure consisted of only two kinds of silicon sites, SiO…”

mentioning

confidence: 99%

Ultraviolet-Curing Mechanism of Porous-SiOC

Ushio

Ohno

Hamada

et al. 2007

jjap

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Utilizing the structure of porous SiOC determined in our previous study, we investigated a mechanism for improving the properties of porous SiOC film by ultraviolet irradiation (UV curing). The generation of a Si-O-Si cross link from an OH group and its adjacent CH 3 group is the primary process in UV curing. This cross-link generation enhances mechanical strength of the material and lowers the dielectric constant. Decrease in the number of CH 3 groups and increase in the number of Si-H bonds, both due to UV curing, cause slight increases in mass density and dielectric constant of the film.

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Impacts of UV cure for reliable porous PECVD SiOC integration [IC interconnect applications]

Cited by 7 publications

References 0 publications

Depth dependence of ultraviolet curing of organosilicate low-k thin films

Depth dependence of ultraviolet curing of organosilicate low-k thin films

Low‐kMaterials: Recent Advances

Ultraviolet-Curing Mechanism of Porous-SiOC

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