Impedance and admittance spectroscopy of Mn3O4-doped ZnO incorporated with Sb2O3 and Bi2O3

Hong, Younwoo; Kim, J.H.

doi:10.1016/j.ceramint.2003.12.026

Cited by 52 publications

(16 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…They found that resistance (nearly 2 M at different concentrations of oxygen) and capacitance (nearly 90 pF at different concentrations of oxygen) due to grain boundaries play a significant contribution in the characteristics of the gas sensor. Similarly Hong and Kim 40 in the year 2004 found that IS analysis is an effective tool for explanation of the effect of Mn 3 O 4 doping on the bulk and grain boundary characteristics of ZnO-Bi 2 O 3 -Sb 2 O 3 system. They found that activation energy of 0.33 eV for bulk trap level of Mn-doped sample and that for 0.40 eV for interface trap level.…”

Section: Electrical Propertiesmentioning

confidence: 97%

Synthesis, characterization and electrical properties of visible-light-driven Pt-ZnO/CNT

Mujahid

2015

Bull Mater Sci

View full text Add to dashboard Cite

This paper deals with synthesis of ZnO doped with different concentrations of platinum (Pt) and its deposition on the surface of multi-walled carbon nanotube (MWCNT). The synthesized nanocomposite material was characterized by standard analytical techniques like X-ray diffraction (XRD), UV-vis spectroscopy, scanning electron microscopy, transmission electron microscopy and energy-dispersive spectroscopy. The XRD analysis confirms two things; first, synthesized nanocomposite shows no impurity peaks indicating products being crystalline in nature, second, the phase structure of composite remains unchanged during doping of Pt into ZnO crystal. Results indicate that the incorporation of dopant into ZnO coated on the surface of MWCNT was found to shift the fundamental absorption edge towards the longer wavelength side. The impedance analysis was carried out to distinguish between the grain and grain boundary contributions to the system. The dielectric property was strongly affected by increasing the dopant concentration. The dielectric constant (ε) and dielectric loss (tan δ) factors decrease with the increase in frequency only upto a certain limit. The a.c. conductivity also increases with the increase in frequency.

show abstract

Section: Electrical Propertiesmentioning

confidence: 97%

Synthesis, characterization and electrical properties of visible-light-driven Pt-ZnO/CNT

Mujahid

2015

Bull Mater Sci

View full text Add to dashboard Cite

show abstract

“…Detailed explanation about data analysis for polycrystalline ceramics can be found in early references [12].…”

Section: B Impedance Complex Plane Analysesmentioning

confidence: 99%

“…One RC element contains resistance (R g ) and capacitance (C g ) of the semiconducting grains. The other (composed by resistance R gb and capacitance C gb ) represents the high-resistance grain boundaries [12]. With the equivalent circuit, the frequency dependence of Z * is characterized by Equation 3 [13],…”

Section: B Impedance Complex Plane Analysesmentioning

confidence: 99%

Influence of DC degradation on the dielectric response of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf> Ceramics

Zhao

Liao

Zhang

et al. 2015

2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials (ICPADM)

View full text Add to dashboard Cite

In this work, CaCu 3 Ti 4 O 12 ceramics were synthesized to investigate the influence of dc degradation on the dielectric response. Two dielectric relaxation processes related to grain and domain boundaries appearing at low temperature were fitted according to Debye theory. It was found that the dc conductance loss at low frequency was greatly increased after dc degradation. The relaxation behaviors of grain and grain boundaries were characterized in impedance plots. The results showed that the values of grain boundaries resistance were greatly decreased from 1.7 megohm to 15 megohm at 433 K with the dc degradation. And the corresponding activation energy of grain boundaries was decreased from 1.25 eV to 0.73 eV, while the activation energy of grain keep nearly a constant at about 0.11 eV. The results of current density-breakdown field (J-E) behavior revealed that the breakdown field and nonlinear coefficient of CaCu 3 Ti 4 O 12 ceramics were both dropped after the dc gradation processes. The barrier height were also decreased from 0.57 eV to 0.31 eV. Therefore, it was proposed that the relaxation processes of grain boundaries may be mainly related with electrical properties of CaCu 3 Ti 4 O 12 ceramics and influenced by the dc degradation.

show abstract

“…또한 ZnO-Bi2O3-Sb2O3(ZBS)계에 소량의 첨 가물들 (Mn, Co, Cr, Ni 등)은 2차상인 파이로클로어 (pyrochlore, Zn2Bi3Sb3O14)의 생성과 분해반응 온도를 변화시켜 미세구조를 제어할 뿐 아니라 바리스터 특 성에 영향을 미친다 [7][8][9][10][11][12][13]. 일반적으로 ZnO 바리스 터의 도너형 결함은 Zni와 Vo이 대표적이며, ZnO 바 리스터의 비선형성에 영향을 미치는 것으로 보고되고 있다 [1,[14][15][16][17][18] …”

Section: 서 론unclassified

Effect of Sintering Temperature and Sb/Bi Ratio on Microstructure and Grain Boundary Properties of ZnO-Bi₂O₃-Sb₂O₃-Co₃O₄Varistor

Hong¹,

Shin

Yeo³

et al. 2011

Journal of the Korean Institute of Electrical and Electronic Ma

View full text Add to dashboard Cite

In this study we aims to evaluate the effects of 1/3 mol% Co3O4 addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of ZnO-Bi2O3-Sb2O3 (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of Co3O4 in ZnO-Bi2O3-Sb2O3 (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient α=23∼50) and somewhat sensitive to ambient oxygen with temperature.

show abstract

Impedance and admittance spectroscopy of Mn3O4-doped ZnO incorporated with Sb2O3 and Bi2O3

Cited by 52 publications

References 6 publications

Synthesis, characterization and electrical properties of visible-light-driven Pt-ZnO/CNT

Synthesis, characterization and electrical properties of visible-light-driven Pt-ZnO/CNT

Influence of DC degradation on the dielectric response of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf> Ceramics

Effect of Sintering Temperature and Sb/Bi Ratio on Microstructure and Grain Boundary Properties of ZnO-Bi₂O₃-Sb₂O₃-Co₃O₄Varistor

Contact Info

Product

Resources

About

Impedance and admittance spectroscopy of Mn3O4-doped ZnO incorporated with Sb2O3 and Bi2O3

Cited by 52 publications

References 6 publications

Synthesis, characterization and electrical properties of visible-light-driven Pt-ZnO/CNT

Synthesis, characterization and electrical properties of visible-light-driven Pt-ZnO/CNT

Influence of DC degradation on the dielectric response of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf> Ceramics

Effect of Sintering Temperature and Sb/Bi Ratio on Microstructure and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Co3O4Varistor

Contact Info

Product

Resources

About

Effect of Sintering Temperature and Sb/Bi Ratio on Microstructure and Grain Boundary Properties of ZnO-Bi₂O₃-Sb₂O₃-Co₃O₄Varistor