Impedance behavior of spin-valve transistor

Abstract

Articles you may be interested inSpin-valve transistors with high magnetocurrent and 40 μA output currentThe magnetoimpedance ͑MZ͒ effect of the pseudo-spin-valve transistor ͑PSVT͒ was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The PSVT can be regarded as a complex combination of resistors, inductors, and capacitors, while the impedance ͑Z͒ consists of a real part, the resistance ͑R͒, and an imaginary part, the reactance ͑X͒. Besides, all these components exhibit magnetic hysteresis. It is due to the frequency dependent behavior that R does not reach a minimum at the resonant frequency ͑f r ͒. The frequency dependences of MZ and MX ratios cross zero at f x = 6.5 MHz and at f r = 3.65 MHz, respectively. The shape of magnetoreactance ͑MX͒ loop is reverse to the magnetoresistance ͑MR͒ loop; furthermore, MX ratio changes sign from negative at f Ͻ f r to positive at f Ͼ f r . The MZ loop also reverses shape and sign after crossing f x . For instance, the MZ loop with a ratio of 0.077% at 6 MHz switches to −0.086% and −0.125% at 7 and 8 MHz, respectively.

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An approach to increase the integration rate of planar drift heterobipolar transistors

“…Currently, there is an intensive increase in the integration rate of elements of integrated circuits (p-n-junctions, transistors,…) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. At the same time this has attracted an increasing interest in their performance.…”

“…This change leads to decrease in elements integrated circuits [21]. One way to increase performance of elements of integrated circuits is determination of materials with higher values of charge carriers mobility [1][2][3][4][5][6][7][8][9][10][11][12][13][14][22][23][24][25]. Other ways to increase performance are elaboration of new technological processes and modification of existing ones.…”

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