Impedance Spectroscopy Characterization in Bipolar Ta/MnO_x/Pt Resistive Switching Thin Films

Abstract

Impedance spectroscopy was applied to MnOx‐based thin films prepared in symmetric and asymmetric electrode configurations, i.e., Pt/MnOx/Pt and Ta/MnOx/Pt, respectively. Equivalent circuit analysis suggests the presence of higher resistance surface layers adjacent the electrodes, in addition to a higher conductivity component at central portions of the MnOx thin films. The asymmetric configuration enables the Ta/MnOx interfacial layer to facilitate the redox transport of oxygen ions, where significant changes in resistance with the electric field are responsible for the higher on/off resistance ratio in Ta/MnOx/Pt. The higher dielectric constant and bias‐dependent capacitance and resistance support the coexistence of both oxidized surfaces and interfacial layers.

Electrical Properties of Sr1–xBixFe0.6Sn0.4O3 Thermistor Ceramics

“…In particular for the impedance plots above 70°C, the small incomplete arc at high frequencies almost disappears and an additional straight line paralleling to the Z ” axe is observed in the higher frequency position. It is deduced that the additional straight line above 70°C is attributed to the contribution of a pure resistance, similar to the impedance characteristics of resistive switching films at higher bias fields . Furthermore, a very small but significant arc ascribed to the Ag electrodes is observed between 90 and 100°C at lower frequencies, which confirms that the low‐frequency arcs or semicircles in Figs.…”

Resistive switching properties of manganese oxide nanoparticles with hexagonal shape

“…The typical resistive switching behaviors of complex materials such as Pr 0.7 Ca 0.3 MnO 3 , Mn-doped ZnO x S 1−x , and Mn-doped ZnO were intensively investigated [6,8,9]. In addition, the electrical conduction and resistive switching properties of manganese oxide thin films have been studied [10][11][12][13][14]. In contrast to the deposition process of thin film, the deposition of nanoparticles is a low-temperature and solution-based process.…”

Resistive Switching Behaviors of Sol‐Gel‐Derived MgNb2O6 Thin Films on ITO/glass Substrate

“…Over the past few years, several materials systems have been found to possess stable resistive switching (RS) behavior, attracting great attention as candidates for next‐generation nonvolatile memory applications. Niobium‐based oxides have been extensively studied for applications such as microwave dielectrics, optoelectronics, and photoactive materials .…”