Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures

Abstract

In this work, a comprehensive characterization of metal-insulator-semiconductor structures by impedance spectroscopy is demonstrated for the case of electrically insulating, highly c-axis oriented, 600 nm sputter-deposited AlN films on n-Si substrates with Al top electrodes. Direct visual analysis and equivalent circuit fitting of the dielectric data were performed. For the latter procedure, the circuit model consisted of three series resistor-capacitor connection elements for the three dielectric contributions detected. The three contributions were identified as the AlN film, n-Si substrate, and an interface barrier effect. Several essential device parameters were determined separately, by visual or equivalent circuit fitting analysis, such as the dielectric permittivity of the AlN layer, the temperature dependence of the AlN permittivity, and the resistances of the AlN layer, the n-Si substrate, and the interface contribution. Furthermore, DC bias dependent impedance measurements allowed the identification of a Schottky-type interface barrier.

The magnetic asymmetry effect in geometrically asymmetric capacitively coupled radio frequency discharges operated in Ar/O2

“…The deposition of thin films is a key procedure for many applications in modern industry [15,40]. A wide range of different technological fields relies on it: for instance, high quality thin films are needed for optical components, microelectronics and medical applications [29,41,56,66]. An important and commonly used thin film deposition process is physical vapor deposition (PVD) [53].…”

Electrical response of polymer functionalized ultrafine inorganic particles under frequency conditions: an in situ approach

“…The Cole-Cole plot for the POT complex exhibited a semi-circular arc at the high frequency region followed by a perpendicular straight line at the low frequency region. The low frequency part is due to the accumulation of trapped charges along the border of the POT system, between Pd(I) and the lone pair of nitrogen, 41,42 whereas the semicircular arc is a signature of the relaxation for the bound charges, originating due to the dipolar type of interaction between Pd(I) and the lone pair of nitrogen in the polymer complex. For the PIOT-5 sample, the semicircular arc was broadened and tilted towards a lower frequency region, which indicates the distribution of relaxation times of the dipoles due to in situ formed palladium iodide.…”

Bias voltage effect on impedance, modulus and dielectric spectroscopies of HfO2-interlayered Si-based Schottky diodes at room temperature

“…The increase in conductivity with the increase in the applied DC bias voltage can be attributed to the increase in charge carrier or current injection from the metal electrodes across the potential barrier at the interface. Equivalently, such effect can be attributed to the decrease in the Schottky-type interface barrier that most probably arises at the Al/HfO 2 interface because Schottky-type interfaces may most probably happen at metal-insulator interfaces due to the large gradient of the work functions [27].…”

“…In the investigated frequency range, two dielectric contributions were detected: with the increase in frequency, the dielectric constant remained initially constant and then decreased, excluding the behavior at 0.5 V which remained constant regardless of frequency. However, Schmidt et al have detected three dielectric contributions in Al/AIN/n-Si MIS structures in a wide frequency range (1 Hz-10 MHz) and were identified as the AIN film, n-Si substrate and an interface barrier effect [27]. Here, the plateau behavior is due to the dielectric constant of HfO 2 interfacial layer, and the decrease in dielectric constant with the increase in frequency is originated from the p-Si substrate interface.…”