2005
DOI: 10.1016/j.physb.2005.01.472
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Impedance spectroscopy study on transport properties of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine

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Cited by 19 publications
(5 citation statements)
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“…For many small-molecule organic semiconductor materials, the dielectric permittivity at optical frequencies is known from thin-film ellipsometry measurements [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26], electron energy loss spectroscopy [27], and from theory using quantum-chemically calculated molecular polarizabilities and the Clausius-Mossotti relationship [28,29]. The relative dielectric constant at quasistatic conditions may be obtained from low-frequency capacitance-voltage (C-V) studies of sandwich-type devices [30][31][32][33][34][35][36][37][38][39]. In principle, the dielectric permittivity in the full frequency range of interest can be obtained by combining the results of f -dependent C-V measurements (dielectric spectroscopy [40]), terahertz, infrared, and optical spectroscopy measurements.…”
Section: Introductionmentioning
confidence: 99%
“…For many small-molecule organic semiconductor materials, the dielectric permittivity at optical frequencies is known from thin-film ellipsometry measurements [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26], electron energy loss spectroscopy [27], and from theory using quantum-chemically calculated molecular polarizabilities and the Clausius-Mossotti relationship [28,29]. The relative dielectric constant at quasistatic conditions may be obtained from low-frequency capacitance-voltage (C-V) studies of sandwich-type devices [30][31][32][33][34][35][36][37][38][39]. In principle, the dielectric permittivity in the full frequency range of interest can be obtained by combining the results of f -dependent C-V measurements (dielectric spectroscopy [40]), terahertz, infrared, and optical spectroscopy measurements.…”
Section: Introductionmentioning
confidence: 99%
“…2(b), At higher frequencies the imaginary part of the impedance for different bias voltages merges together and shows linear dependence on frequency with a slope of À1 indicating that the device behaves like a pure capacitor and shows the characteristics of a disordered insulator. 15,16) At lower frequencies a gradual change is observed as the bias is increased.…”
Section: Resultsmentioning
confidence: 99%
“…This effect at higher frequencies is caused by the contact resistance in circuit. 16) We have calculated the effective conductivity eff from the equation…”
Section: Resultsmentioning
confidence: 99%
“…Actually, as they explained that physical factors such as dielectric constants, mobility and HOMO (highest occupied molecular orbit) levels of the organic semiconductor compound play an important role in the fabrication of the enhancement-type vertical organic transistor [29]. In our cases, TPD has a dielectric constant 4.0-4.5 in the low-frequency region [30] but NPB has a dielectric constant $3.5 [31]. On the other hand, the HOMO levels of TPD and NPB are À5.4 eV [32] and À5.5 eV [33], respectively.…”
Section: Article In Pressmentioning
confidence: 91%