Implantation and annealing of aluminum in 4H silicon carbide

Rambach, Martin; Schmid, Frank; Krieger, Michael; Frey, L.; Bauer, Anton J.; Pensl, Gerhard; Ryssel, H.

doi:10.1016/j.nimb.2005.04.079

Cited by 12 publications

(12 citation statements)

References 6 publications

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“…Upon comparing these roughness values with those obtained after conventional uncapped and AlN/graphite capped annealings (not shown), the following observations can be made. Roughness increase in the microwave annealed samples is much lower than in the uncapped conventional furnace-annealed samples [11,12], which show an increase in roughness of $15 times the value of the as-implanted sample for 1700°C/15 min annealing [7]. Roughness increase after uncapped microwave annealing of this work is comparable with the surface roughness obtained after furnace annealing using a graphite or AlN cap [13,14].…”

Section: Surface Roughness Of the Microwave Annealed Samplessupporting

confidence: 69%

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Solid-state microwave annealing of ion-implanted 4H–SiC

Sundaresan¹,

Tian²,

Ridgway³

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Surface Roughness Of the Microwave Annealed Samplessupporting

confidence: 69%

“…Due to the sublimation problem, the maximum annealing temperatures employed during conventional furnace annealing are limited to 61650°C [1,2]. Consequently, sheet resistivities of p-type dopants in SiC have remained in the 10 4 X/h range [5][6][7]. Clearly, these values are too high for fabricating efficient SiC power devices [8].…”

Section: Introductionmentioning

confidence: 99%

Solid-state microwave annealing of ion-implanted 4H–SiC

Sundaresan¹,

Tian²,

Ridgway³

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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“…The maximum roughness measured in the microwave annealed samples is 2.1 times the roughness value measured on the as-implanted sample ͑0.96 nm͒. The roughness increase in the microwave-annealed samples is much lower than the values observed earlier [12][13][14] for uncapped conventional furnace anneals ͑which show an increase in roughness of ϳ15 times the as-implanted value͒. The roughness increase after uncapped microwave annealing in this work is comparable to the surface roughness measured earlier after furnace annealing using a graphite 15 or AlN ͑Ref.…”

Section: Resultsmentioning

confidence: 64%

Ultrahigh-temperature microwave annealing of Al+- and P+-implanted 4H-SiC

Sundaresan

Rao

Tian³

et al. 2007

Journal of Applied Physics

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In this work, an ultrafast solid-state microwave annealing has been performed, in the temperature range of 1700–2120°C on Al+- and P+-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of ∼600°C∕s. The samples were annealed for 5–60s in a pure nitrogen ambient. Atomic force microscopy performed on the annealed samples indicated a smooth surface with a rms roughness of 1.4nm for 5×5μm2 scans even for microwave annealing at 2050°C for 30s. Auger sputter profiling revealed a <7nm thick surface layer composed primarily of silicon, oxygen, and nitrogen for the samples annealed in N2, at annealing temperatures up to 2100°C. X-ray photoelectron spectroscopy revealed that this surface layer is mainly composed of silicon oxide and silicon nitride. Secondary ion mass spectrometry depth profiling confirmed almost no dopant in diffusion after microwave annealing at 2100°C for 15s. However, a sublimation of ∼100nm of the surface SiC layer was observed for 15s annealing at 2100°C. Rutherford backscattering spectra revealed a lattice damage-free SiC material after microwave annealing at 2050°C for 15s, with scattering yields near the virgin SiC material. Van der Pauw–Hall measurements have revealed sheet resistance values as low as 2.4kΩ∕◻ for Al+-implanted material annealed at 2100°C for 15s and 14Ω∕◻ for the P+-implanted material annealed at 1950°C for 30s. The highest electron and hole mobilities measured in this work were 100 and 6.8cm2∕Vs, respectively, for the P+- and Al+-implanted materials.

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“…5(a)). These furrows are supposed to be caused by the thermal desorption of species such as Si, SiC 2 , Si 2 C, etc, a mechanism which is popularly known as 'step bunching' (Capano et al, 1999;Rao et al, 1999;Vathulya and White, 2000;Rambach et al, 2005). The step bunching puts fabrication constraints on SiC devices (Phelps et al, 2002).…”

Section: Surface Roughness Of Microwave Annealed Sic and Ganmentioning

confidence: 99%

Ultra-Fast Microwave Heating for Large Bandgap Semiconductor Processing

Rao¹

2011

Advances in Induction and Microwave Heating of Mineral and Organic Materials

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Implantation and annealing of aluminum in 4H silicon carbide

Cited by 12 publications

References 6 publications

Solid-state microwave annealing of ion-implanted 4H–SiC

Solid-state microwave annealing of ion-implanted 4H–SiC

Ultrahigh-temperature microwave annealing of Al+- and P+-implanted 4H-SiC

Ultra-Fast Microwave Heating for Large Bandgap Semiconductor Processing

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