Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties

Chandramohan, S.; Kanjilal, A.; Sarangi, S.N.; Majumder, Subrata; Ramakrishnan, S.; Som, T.

doi:10.1063/1.3224867

Cited by 41 publications

(16 citation statements)

References 38 publications

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“…The band gap of Cd 0.9 Zn 0.1 S nanoparticles was obtained as 3.91 eV, and the band gap of Co = 1, 2 and 3 % doped Cd 0.9-x Zn 0.1 S nanoparticles were found to be 3.95, 3.88, and 3.84 eV, respectively. The present red shift (reduction) of energy gap is supported by Chandramohan et al [18] in Co-doped CdS. The reduced energy gap with Co substitution is mainly due to sp-d exchange interaction between the band electrons and the localized d electrons of the Co 2?…”

Section: Optical Energy Gap (E G )supporting

confidence: 72%

Doping induced structural, band gap and photoluminescence properties of Cd0.9−xZn0.1CoxS nanoparticles

Devadoss¹,

Muthukumaran

2016

J Mater Sci: Mater Electron

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Co doped Cd 0.9 Zn 0.1 S (Co = 0-3 %) nanoparticles were prepared by a simple chemical co-precipitation method at room temperature. Optical and structural properties of the prepared samples have been studied using X-ray diffraction (XRD) and UV-visible spectrophotometer. XRD confirmed the cubic structure (phase singularity) of the samples and decline the secondary phase formation. Energy dispersive X-ray spectra showed the presence of Cd, Zn, Co and S in the appropriate proportion. Distortion produced by Co 2? in Cd-Zn-S made the lattice parameter of Co doped Cd 0.9-x Zn 0.1 S nanoparticles always higher than Cd 0.9 Zn 0.1 S. The reduced energy gap with Co substitution is mainly due to sp-d exchange interaction between the band electrons and the localized d electrons of the Co 2? ions substituting for host ions. The ultraviolet emission and visible band emission intensity and the modification in emission band position by Co-doping were discussed based on the size effect/change in structure and band gap. Based on the tailoring of energy gap and luminescence behavior, it can be concluded that Co-doped Cd 0.9-x Zn 0.1 S is a promising material for selective coatings for solar cells; use as antireflective coating materials, and for fabrication of optoelectronic devices.

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Section: Optical Energy Gap (E G )supporting

confidence: 72%

Doping induced structural, band gap and photoluminescence properties of Cd0.9−xZn0.1CoxS nanoparticles

Devadoss¹,

Muthukumaran

2016

J Mater Sci: Mater Electron

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“…From figure 4.2 (b), the (101) peak position is shifted a little towards higher angles with increase of the Ni content. This could be due to the CdS lattice modification by the Ni (10 at.%) doping because of the difference in radii of Cd (0.98Å) and Ni (0.74Å) which is consist with the earlier reports on Nidoped CdS systems[25]. This may confirms the formation of pure Ni doped CdS particles.…”

supporting

confidence: 81%

Studies on the effect of Ni and Ba co-doping on CdS nano structures

Kasirajan¹,

Karunakaran²,

Subhalakshmi³

et al. 2019

IJSRPAS

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The pure and various metals (Ni and Ba) doped Cadmium Sulphide (CdS) nano particles were successfully synthesized by chemical co-precipitation method using analytical grade Cadmium Chloride and Sodium Sulphide chemicals. The prepared samples were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), and Optical absorption (UV-Vis) studies. The XRD results showed that the all prepared samples were polycrystalline with hexagonal structure. The peaks were identified and compared with JCPDS (File No. 89-2944) values. From the SEM studies, the particles agglomerations are decreased by the addition of metal dopants and the average grain size of the particles are found in the range 500 nm. The optical properties have been characterized. The obtained band gap values are 2.56 eV, 2.54 eV, 2.35 eV and 2.48 eV. The band gap is reduced and the crystallization is increased in the Ni and Ba doped CdS nano particles are more suitable for fabrications of Opto electronic studies.

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“…In recent years, transition metal (TM) doped nanoparticles have fascinated wide scientific attention because of their unique optical properties [8][9][10][11][12][13] and their potentiality for various applications other than biomedical labelling [14,15]. Lastly, the efficiency of CdS semiconductor was improved by changing its optical and/or electrical properties by doping with some transition metals such as copper [16,17], manganese [18,19] and cobalt [20]. Experimentally, Srinivasa et al [21] have successfully prepared Ni doped CdS nanoparticles by conventional chemical co-precipitation method and found that doping CdS with Ni modify the luminescence properties by creating shallow acceptor states.…”

Section: Introductionmentioning

confidence: 99%

Influence of Ni–Ni separation on the optoelectronic and magnetic properties of Ni-doped cubic cadmium sulphide

Benstaali

Bentata

Bentounes

et al. 2014

Materials Science in Semiconductor Processing

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Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties

Cited by 41 publications

References 38 publications

Doping induced structural, band gap and photoluminescence properties of Cd0.9−xZn0.1CoxS nanoparticles

Doping induced structural, band gap and photoluminescence properties of Cd0.9−xZn0.1CoxS nanoparticles

Studies on the effect of Ni and Ba co-doping on CdS nano structures

Influence of Ni–Ni separation on the optoelectronic and magnetic properties of Ni-doped cubic cadmium sulphide

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