Implantation damage recovery and carrier activation studies of Si‐implanted Al_0.18Ga_0.82N by temperature dependent Hall‐effect measurements

Abstract

PACS 68.55. Ln, 73.61.Ey, 78.55.Cr, 85.40.Ry N-type activation studies of Si-implanted Al 0.18 Ga 0.82 N have been made as a function of anneal temperature and ion dose to obtain maximum possible activation efficiency. Nearly 100 and 95% electrical activation efficiencies were obtained for Si-implanted Al 0.18 Ga 0.82 N with doses of 5x10 14 and 1x10 15 cm -2 and annealing at 1250 and 1200 o C for 25 min, respectively. The room temperature sheet resistivity decreases from 528 to 196 Ω/square with increasing anneal temperature from 1150 to 1250 o C for a dose of 5x10 14 cm -2 . Both sheet carrier concentration (activation efficiency) and mobility increase with anneal temperature, indicating an improved implantation damage recovery with anneal temperature.