Implantation Doping and Stimulated Emission of Er<sup>3+</sup> in LinbO<sub>3</sub>:Ti Optical Waveguides

Erbium doped materials are of great interest in thin film integrated optoelectronic technology, due to their Er3+intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er-doped dielectric thin films can be used to fabricate planar optical amplifiers or lasers that can be integrated with other devices on the same chip. Semiconductors, such as silicon, can also be doped with erbium. In this case the Er may be excited through optically or electrically generated charge carriers. Er-doped Si light-emitting diodes may find applications in Si-based optoelectronic circuits. In this article, the synthesis, characterization, and application of several different Er-doped thin film photonic materials is described. It focuses on oxide glasses (pure SiO2, phosphosilicate, borosilicate, and soda-lime glasses), ceramic thin films (Al2O3,Y2O3, LiNbO3), and amorphous and crystalline silicon, all doped with Er by ion implantation. MeV ion implantation is a technique that is ideally suited to dope these materials with Er as the ion range corresponds to the typical micron dimensions of these optical materials. The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for the various materials.

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Optical and Structural Characterization of Erbium-Doped TiO[sub 2] Xerogel Films Processed on Porous Anodic Alumina

Гапоненко

Sergeev

Степанова

et al. 2001

J. Electrochem. Soc.

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Titania films, doped with erbium, were fabricated on porous anodic alumina from a normalTifalse(OC2H5)4 precursor. The samples, subjected to thermal processing up to 1270 K, exhibited strong luminescence at 1.53 μm associated with 4I13/2→4I15/2 transitions of Er3+ ions in the TiO2 xerogel. The intensity of photoluminescence increased with the number of xerogel film depositions onto alumina. Secondary ion mass spectrometry analyses show that the pores of anodic alumina are filled by the xerogel after sequential spinning of ten layers. Cooling of the samples to 4.2 K gives enhancement of the intensity of the Er-related band at 1.53 μm and narrowing of the full width at half maximum from 20 to 10 nm. © 2001 The Electrochemical Society. All rights reserved.

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Implantation Doping and Stimulated Emission of Er³⁺ in LinbO₃:Ti Optical Waveguides

Cited by 4 publications

References 6 publications

Optical analysis of damage profiles in ion implanted LiNbO3

Optical analysis of damage profiles in ion implanted LiNbO3

Erbium implanted thin film photonic materials

Optical and Structural Characterization of Erbium-Doped TiO[sub 2] Xerogel Films Processed on Porous Anodic Alumina

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Implantation Doping and Stimulated Emission of Er3+ in LinbO3:Ti Optical Waveguides

Cited by 4 publications

References 6 publications

Optical analysis of damage profiles in ion implanted LiNbO3

Optical analysis of damage profiles in ion implanted LiNbO3

Erbium implanted thin film photonic materials

Optical and Structural Characterization of Erbium-Doped TiO[sub 2] Xerogel Films Processed on Porous Anodic Alumina

Contact Info

Product

Resources

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Implantation Doping and Stimulated Emission of Er³⁺ in LinbO₃:Ti Optical Waveguides