Implanted silicon JFET on completely depleted high-resistivity devices

Radeka, V.; Rahek, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, Marco; Bertuccio, G.; Holl, P.; Strüder, L.; Kemmer, J.

doi:10.1109/55.32439

Cited by 110 publications

(28 citation statements)

References 7 publications

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“…In particular, the minimization in the number of hightemperature thermal cycles during fabrication has been stressed. As a result the processing used for the circuitry in the previous work is somewhat restricted in comparison to modem integrated-circuit processes [1][2][3][4]. In contrast, we have developed a detector process that overcomes the hightemperature processing limitations and allows the use of standard MOS technology to realize the readout circuitry [5][6].…”

Section: Process Design Considerationsmentioning

confidence: 99%

“…In previously published work much emphasis has been placed on the special processing techniques necessary to develop detectors with low reverse-bias leakage currents [1][2][3][4]. In particular, the minimization in the number of hightemperature thermal cycles during fabrication has been stressed.…”

Section: Process Design Considerationsmentioning

confidence: 99%

“…Recently there has been much interest in the integration of radiation detectors and preamplifiers on the same silicon substrate [1][2][3][4][5][6]. The ability to perform electronic signal.processing on the same chip as the detector offers significant advantages in certain applications, especially in large-scale tracking detectors proposed for the Superconducting Super Collider.…”

Section: Introductionmentioning

confidence: 99%

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A monolithically integrated detector-preamplifier on high-resistivity silicon

Holland

Spieler

1990

IEEE Trans. Nucl. Sci.

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Section: Process Design Considerationsmentioning

confidence: 99%

Section: Process Design Considerationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A monolithically integrated detector-preamplifier on high-resistivity silicon

Holland

Spieler

1990

IEEE Trans. Nucl. Sci.

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“…The starting material is a 300-m-thick-high resistivity (2 k cm) silicon substrate. Each SDD of the array has the input JFET of the readout electronics directly integrated in close proximity of the collecting anode to reach optimum performance [8]. The hole in the center of the array has been laser cut.…”

Section: Spectrometer Architecturementioning

confidence: 99%

A new XRF spectrometer based on a ring-shaped multi-element silicon drift detector and on X-ray capillary optics

Longoni

Fiorini

Guazzoni

et al. 2002

IEEE Trans. Nucl. Sci.

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Abstract-This paper describes an innovative X-ray fluorescence spectrometer designed to achieve high-energy resolution, position resolution, and detection rate in elemental mapping applications. The spectrometer is based on a ring-shaped monolithic array of silicon drift detectors (SDDs) with a hole cut in its center. A coaxial X-ray excitation beam is transported to the sample through this hole. In this way, the solid angle for the collection of the X-ray fluorescence is optimized. Moreover, the X-ray beam is collimated on the sample using capillary optics in order to obtain high photon density in a small excitation spot. Detector, optics, and generator are assembled in a compact vacuum tightened unit. The structure of the proposed spectrometer and the first experimental results of its characterization are presented.

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“…This results in a reduction in the electronic noise, since the parasitic capacitance associated with preamplifier-detector connection is minimised. Furthermore, it reduces the need for shielding against capacitively-coupled pickup noise [1] and simplifies the circuit process assembly [2], [3]. However, these benefits must be traded off against the increased complexity (and potentially cost) of fabrication.…”

mentioning

confidence: 99%

Evaluation of Silicon Detectors With Integrated JFET for Biomedical Applications

Safavi-Naeini

Franklin

Lerch

et al. 2009

IEEE Trans. Nucl. Sci.

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Abstract-This paper presents initial results from electrical, spectroscopic and ion beam induced charge (IBIC) characterisation of a novel silicon PIN detector, featuring an on-chip -channel JFET and matched feedback capacitor integrated on its -side (frontside). This structure reduces electronic noise by minimising stray capacitance and enables highly efficient optical coupling between the detector back-side and scintillator, providing a fill factor of close to 100%. The detector is specifically designed for use in high resolution gamma cameras, where a pixellated scintillator crystal is directly coupled to an array of silicon photodetectors. The on-chip JFET is matched with the photodiode capacitance and forms the input stage of an external charge sensitive preamplifier (CSA). The integrated monolithic feedback capacitor eliminates the need for an external feedback capacitor in the external electronic readout circuit, improving the system performance by eliminating uncontrolled parasitic capacitances. An optimised noise figure of 152 electrons RMS was obtained with a shaping time of 2 s and a total detector capacitance of 2pF. The energy resolution obtained at room temperature (21 C) at 27 keV (direct interaction of I-125 gamma rays) was 5.09%, measured at full width at half maximum (FWHM). The effectiveness of the guard ring in minimising the detector leakage current and its influence on the total charge collection volume is clearly demonstrated by the IBIC images.

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Implanted silicon JFET on completely depleted high-resistivity devices

Cited by 110 publications

References 7 publications

A monolithically integrated detector-preamplifier on high-resistivity silicon

A monolithically integrated detector-preamplifier on high-resistivity silicon

A new XRF spectrometer based on a ring-shaped multi-element silicon drift detector and on X-ray capillary optics

Evaluation of Silicon Detectors With Integrated JFET for Biomedical Applications

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