This paper reports implementation and wafer-level testing of a self-assembled tunable microelectromechanical systems (MEMS) inductor with electrostatic, electrothermal, and thermal tuning capability. The surface micromachined inductor was fabricated on a high-resistivity (HR) substrate ( k cm) using a doped polysilicon and Au-Cr metal combination as a bimorph structural layer for providing self-assembled elevation with an enhanced factor. Extensive electro-thermo-mechanical and RF characterization was carried out for the inductor, the latter over a temperature range from 30 C to 150 C. Furthermore, the tunable inductor was integrated in the tank circuit of a CMOS oscillator and wafer-level MEMS-CMOS voltage-controlled oscillator testing revealed a best figure-of-merit of 197.6 dB with a frequency tuning range of 1.3-2.4 GHz with a power consumption of 3.07 mW.Index Terms-Bond wire, high-resistivity (HR) substrate, microelectromechanical systems (MEMS) inductor, quality factor, selfassembly, voltage-controlled oscillator (VCO).