Implementation of 1.7 kV silicon carbide metal oxide semiconductor field effect transistors in auxiliary power supplies for industrial applications

Zhang, Xuning; Sheh, Gin

doi:10.23919/cjee.2020.000018

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…The consumables of traditional printers are mainly paper and ink, the ink ejected dur-ing printing is presented on the surface of the paper as a two-dimensional image, 3D printing is to create a threedimensional model diagram on the computer through Solidworks, SKetchUP, 3DMax, and other software according to people's needs, when printing, the drawn model is inputted into the 3D printer in Stl format, and set the printing parameters such as printing speed and layer thickness according to the actual needs, the printer will automatically layer the constructed 3D model and convert it into several layers of separate sheets, during the printing process, the layers are stacked and printed. Materials to construct entities [5]. 3D printing is subdivided into more than a dozen technologies due to the different types of raw materials used and accumulation methods, among which there are mainly 5 more mature technologies, as shown in Table 1.…”

Section: Introductionmentioning

confidence: 99%

Interactive Clothing Optimization Design Model Based on 3D Printing

Sun

2023

Wireless Communications and Mobile Computing

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In order to solve the problem of improving the matching degree between the designed clothing and the user’s body shape, the author proposes an interactive clothing optimization design model based on 3D printing. The user logs in to the system through the user layer, and the display layer uses 3D scanning technology to scan the human head, torso, and other information to collect human body data, and project the collected human body data to obtain the human body outline, select the human body contour line obtained by the denoising process of the interpolation algorithm, extract the feature points of the human body contour line after the denoising process through the corner point detection method, and use the final feature points to obtain the final contour line, the 3D human body data file is generated and sent to the interface layer, the interface layer designs clothing through style design, adding colors and patterns, and uses the global optimization method to adaptively adjust the clothing pieces to achieve clothing design, fit the designed clothing through the virtual fitting module until it meets the user’s needs. Experimental results show that: The system collects user size with an accuracy of higher than 99.5%, and the number of iterations for adaptive adjustment of human body size is less than 30 times. Conclusion: The designed clothing virtual design system can effectively make up for the blank of clothing e-commerce, with high innovation and high practicability.

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Section: Introductionmentioning

confidence: 99%

Interactive Clothing Optimization Design Model Based on 3D Printing

Sun

2023

Wireless Communications and Mobile Computing

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“…However, a high power density based on silicon (Si) devices is difficult to achieve by increasing the switching frequency because the performance of Si devices has reached their theoretical limitations [14][15][16][17] . In recent years, power converters based on Si devices have undergone remarkable upgrades with the usage of WBG devices, such as silicon carbide (SiC) and Gallium nitride (GaN) [18][19][20] , resulting in an increased junction operating temperature and higher switching speed capability [21] . Several full-SiC T-Type inverters were proposed for high-efficiency PV grid-tied applications [22][23][24] .…”

Section: Introductionmentioning

confidence: 99%

A review of WBG and Si devices hybrid applications

Zhang

Zheng

Lou

2021

Chin. J. Electr. Eng.

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In recent years, next-generation power semiconductor devices, represented by silicon carbide (SiC) and gallium nitride (GaN), have gradually emerged. Because wide-bandgap (WBG) devices have better electrical characteristics than those of silicon (Si) based devices, they have attracted increased attention both from academic researchers and industrial engineers. Employing WBG devices will further improve the efficiency and power density of power converters. However, the current price of WBG devices remains extremely high. Thus, some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and cost. To summarize the current research on WBG/Si hybrid applications, the issues mentioned above with representative research approaches, results, and characteristics, are systematically reviewed. Finally, the current research on WBG/Si hybrid applications and their future trends are discussed.

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“…Availability of 2.3 kV SiC devices can reduce the complexity of the converter and lead to better efficiency [21]. Other applications for 2.3 kV SiC power MOSFET are electric ships [22], fly-back auxiliary power supplies [23], and electric lighting [24]. SiC power MOSFETs have been reported with blocking voltages of 1.7 to 2.4 kV [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

Agarwal

Baliga

2021

IEEE J. Electron Devices Soc.

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Experimental results obtained for 2.3 kV SiC planargate power JBSFETs with different cell topologies are analyzed in this paper using analytical models and numerical simulations. All the accumulation-channel devices were simultaneously manufactured in a 6-inch commercial foundry with channel length of 0.5 µm and gate oxide thickness of 55 nm. The Schottky contact width was chosen to achieve an on-state voltage drop of below 2.8 V in the 3 rd quadrant for the integrated JBS diodes. Lower specific on-resistance of the Hexagonal and higher values for the Octagonal cell topologies compared with the conventional Linear cell design were experimentally observed. New analytical models developed for the various cell topologies reveal that these differences arise from changes in the relative contributions from the N + source contact, channel, and accumulation region resistances. The analysis reported in this paper provides new insight on the importance of the accumulation layer resistance to the Octagonal cell topology. Numerical simulation reveal that the measured leakage current behavior correlates with the electric field observed at the Schottky contact within the 2.3 kV JBSFET cell structures. The leakage current begins to rise rapidly when the electric field exceeds 1.5 MV/cm due to Schottky barrier lowering and enhanced tunneling. The reverse transfer capacitance and gate charge were found to correlate with the JFET region density within the different cell topologies. The measured on-state voltage drop in the third quadrant was found to correlate with the JBS diode density in the cell topologies. A new high-frequency figure-of-merit [Vf3Q*Qgd,sp] is proposed for SiC JBSFETs. The Octagonal cell designs are found to be the most suitable for high frequency applications of 2.3 kV JBSFETs based on the HF-FOMs [Ron*Qgd] and [Vf3Q*Qgd,sp].

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Implementation of 1.7 kV silicon carbide metal oxide semiconductor field effect transistors in auxiliary power supplies for industrial applications

Cited by 5 publications

References 8 publications

Interactive Clothing Optimization Design Model Based on 3D Printing

Interactive Clothing Optimization Design Model Based on 3D Printing

A review of WBG and Si devices hybrid applications

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

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