Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

Abstract

In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to design an alternative of MOSFETs. Graphene FETs are one of the alternatives of MOSFETs due to the excellent properties of graphene material. In this work, a user-defined graphene material is defined, and a graphene channel FET is implemented using the Silvaco technology computer-aided design (TCAD) tool at 100 nm and scaled to 20 nm channel length. A silicon channel MOSFET is also implemented to compare the performance. The results show the improvement in subthreshold slope (SS) = 114 mV/dec, ION/IOFF ratio = 14379, and drain induced barrier lowering (DIBL) = 123 mV/V. It is concluded that graphene FETs are suitable candidates for low power applications.

Design of silicon-on-insulator field-effect transistor using graphene channel to improve short channel effects over conventional devices

“…The SIGFET's newly implemented structure exhibits good compatibility with traditional MOSFETs. A GFET with a 20 nm channel was constructed in earlier work [8] using Silvaco's TCAD. The graphene substance was defined by the user.…”

“…The SOI device also reduced the SS because it can operate on a lower V th . The GFET of 20 nm channel length, which was designed in earlier work [8], is modified and SIGFET is designed to reduce the SCE further in this study.…”

“…An experimentally obtained optical constant is used to define this new material [41]. The newly implemented material is applied in line with the research from [8]. Table 1 shows the geometry and process parameters of the device.…”

“…The graphene field-effect transistor (GFET), one of several new transistor structures in the nanoscale regime, has emerged as a potential alternative to the small channel MOSFET [57]. Due to the promising characteristics of graphene material, the GFET is one of the options for upcoming high-speed and lowpower devices [8]. Another technological innovation (FDSOI) technology.…”

“…The study's main contribution is the application of FDSOI technology to enhance the short-channel parameters of the GFET. Another consideration for conducting this research is the improvement in key performance metrics, such as drain-induced barrier lowering (DIBL), subthreshold slope (SS), and I ON /I OFF ratio, which were achieved in a previous study [8] using Silvaco's technology computer-aided design (TCAD). The new device that was implemented and simulated in this study is called the silicon-on-insulator graphene field-effect transistor (SIGFET), which shows improvements in the DIBL, SS, and I ON /I OFF ratio.…”