Implementation of a Low Noise Amplifier With Self-Recovery Capability

Abstract

In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13µm CMOS technology and the self-recovery capability has been experimentally demonstrated.

An efficient design of 45-nm CMOS low-noise charge sensitive amplifier for wireless receivers

“…This proofs that current conductance (charges conductance) through the MOS-FET channel length will be increased by factor S, consequently decrementing the signal distortion transmitted through MOSFET. Now substituting in (11): Note that mathematically the new EN C 2 is reduced by S 3 for the first term and by S for the second term, which really makes a great enhancement on detection accuracy over 180-Nano detectors [1]. We will see in the next section the simulation results that will assure our enhancement shown in calculations.…”