Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach

Liao, Congwei; He, Changde; Chen, Tao; Dai, David; Chung, Smart; Jen, Tean–Sen; Zhang, Shengdong

doi:10.1109/ted.2012.2197624

Cited by 30 publications

(17 citation statements)

References 20 publications

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“…As shown in Fig. 8 Table II compares the power consumption of the proposed circuit with those of recently described circuits using highfrequency pull-down schemes [9], [10]. Although a work with a lower bias for the pull-down TFTs and a smaller capacitive load of the driving clock signals, which is related mainly to the size of the pull-up TFT, has been achieved [9], the previously developed circuit still consumes a significant amount of power owning to its high-frequency pull-down operation.…”

Section: Resultsmentioning

confidence: 99%

“…Although a work with a lower bias for the pull-down TFTs and a smaller capacitive load of the driving clock signals, which is related mainly to the size of the pull-up TFT, has been achieved [9], the previously developed circuit still consumes a significant amount of power owning to its high-frequency pull-down operation. Moreover, one work [10] has an output swing of 31 V and uses the fewer components to reduce the total capacitive loads associated with the driving clock signals. However, the 6.25-kHz pull-down structure can be improved to reduce the power consumption even further.…”

Section: Resultsmentioning

confidence: 99%

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Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme

Lin

Cheng

et al. 2015

IEEE Trans. Electron Devices

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This paper presents a new low-power gate driver circuit designed by hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). An attempt is also made to reduce the power consumption resulting from the high-frequency pulldown structure, in which a pair of 0.25-Hz clock signals is used to implement a low-frequency and synchronously controlled pull-down scheme for recovering the threshold voltage shifts of a-Si:H TFTs under the negative gate-to-source voltage and decreasing the used TFTs. Measurement results indicate that the proposed gate driver circuit consumes 98.7 µW/stage, and the output waveforms are very stable without distortion when the proposed circuit is operated at 100°C for 840 h. Furthermore, the feasibility of the proposed gate driver circuit is demonstrated for the quad-extended-video-graphics-array resolution.Index Terms-Gate driver circuit, power consumption, quad-extended video graphics array (QXGA), threshold voltage shift.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme

Lin

Cheng

et al. 2015

IEEE Trans. Electron Devices

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“…Thus, T1 is turned on prior to T3 in the first and second SSCs. These two SSCs then experience successively the same pre-charge, pull-up, pull-down, and low level holding processes as described in [5], [7], and [8]. As a result, the gate driver outputs 1551-319X © 2014 IEEE.…”

Section: Proposed Gate Driver and Operationmentioning

confidence: 99%

A Compact Bi-Direction Scannable a-Si:H TFT Gate Driver

Liao

Dai

et al. 2015

J. Display Technol.

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An integrated a-Si:H thin-film transistors (TFTs) gate driver on array with both forward and backward scanning function is proposed. The single stage of the gate driver only consists of seven TFTs. The bi-direction scannable function is just realized by controlling the turning-on sequence of two input TFTs. Both scanning modes use the same driving TFT for pulling-up and pullingdown the output voltage and the same circuit unit for holding the low level. The proposed gate driver is fabricated in the 4.5 G TFT production line, and the measurements with the fabricated drivers verify the feasibility of the proposed driver.Index Terms-A-Si:H, bi-directional scan, gate driver, thin-film transistors (TFTs).

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“…By integrating scan driver with thin film transistors (TFTs) on the panel, the display systems can be cheaper and thinner [4][5][6]. However, there are some difficulties for MOTFTs to integrate the scan driver due to the considerable leakage current with the gate-source voltage as zero compared with a-Si:H TFTs or low-temperature poly-Si TFTs.…”

Section: Introductionmentioning

confidence: 99%

A low-power scan driver employing IZO TFTs including an AC–DC type output module

et al. 2015

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Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach

Cited by 30 publications

References 20 publications

Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme

Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme

A Compact Bi-Direction Scannable a-Si:H TFT Gate Driver

A low-power scan driver employing IZO TFTs including an AC–DC type output module

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