2006
DOI: 10.1116/1.2197508
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Implementation of an imprint damascene process for interconnect fabrication

Abstract: Articles you may be interested inCurrent induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

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Cited by 83 publications
(67 citation statements)
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“…This work builds off our previous reports showing that NIL methods can be used to directly pattern SSQ-type material. [5][6][7] Here, we make the critical leap to show that these cubic-SSQ monomers cannot only be patterned by NIL, but also engineered into high-modulus structures with very little shrinkage, excellent thermal stability, quartz-like transparency in the UV range, and an intrinsically low surface energy. For these reasons they exhibit superior performance as mold replication materials, creating high-modulus replicas of a NIL master that can then be used directly as a robust daughter mold for NIL.…”
Section: Doi: 101002/adma201001761mentioning
confidence: 99%
See 1 more Smart Citation
“…This work builds off our previous reports showing that NIL methods can be used to directly pattern SSQ-type material. [5][6][7] Here, we make the critical leap to show that these cubic-SSQ monomers cannot only be patterned by NIL, but also engineered into high-modulus structures with very little shrinkage, excellent thermal stability, quartz-like transparency in the UV range, and an intrinsically low surface energy. For these reasons they exhibit superior performance as mold replication materials, creating high-modulus replicas of a NIL master that can then be used directly as a robust daughter mold for NIL.…”
Section: Doi: 101002/adma201001761mentioning
confidence: 99%
“…Nanoimprint lithography (NIL) has recently emerged as an alternative to optical lithography and combines the potential of sub-fi ve-nanometer patterning resolution with the low cost and simplicity of a stamping process. [1][2][3][4] This has led to signifi cant efforts to implement NIL methods, not only for semiconductor logic devices, but also in fi elds as diverse as the direct patterning of interlayer dielectrics (ILDs) for back-end-of-line (BEOL) interconnect structures, [5][6][7] bitpatterned magnetic media for data storage, [ 8 , 9 ] and high-brightness light-emitting diodes (LEDs). [ 10 ] Some of these are new areas where nanoscale patterning has previously not been considered, and are made possible here by the low cost and simplicity of the NIL stamping processes.…”
mentioning
confidence: 99%
“…Directly creating the pattern in the functional material eliminates the subsequent processing steps that are normally required to the transfer the sacrificial resist pattern into the functional material. [13,14] This has the potential to greatly reduce the Back-End-Of-The-Line (BEOL) manufacturing costs. Some of these eliminated steps, such as the photoresist etching and ashing, are especially harmful to porous dielectrics with interconnected pore networks because the etching byproducts can diffuse into and contaminate the interior regions of the porous material.…”
mentioning
confidence: 99%
“…This technology enables the fabrication of threedimensional (3-D) patterns and very small structures that have features on the order of 200 nm or smaller. [21][22][23][24][25][26][27] Nanofabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed. In ultraviolet curing nanoimprint lithography, low volumetric shrinkage of the material during ultraviolet irradiation strongly influences nanopattern profiles and high-processing accuracy.…”
Section: Double Ultraviolet Curing Nanoimprint Lithography Using Dispmentioning
confidence: 99%