2023
DOI: 10.1038/s41427-023-00481-0
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Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

Abstract: The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM devices comprising the same ferroelectric PbZr0.52Ti0.48O3 (PZT) electrolyte, which can sustain both neuron and synaptic behavior depending on the identity of the active electrode. The Ag/PZT/La0.8Sr0.2MnO3 (LSMO) threshold switching memristor shows abrupt and volatile resistive switching charac… Show more

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