“…saw damage etched), which seems to be in contradiction to the generation of additional interface defects due to the increased effective surface area and crystallographic imperfections imposed by the texturization, as was revealed by surface photovoltage (SPV) measurements [7,12]. However, as explained by Bachtouli et al [13], internal reflections at the front and back side of the textured Si wafer lead to an increased light absorption and, thus, an enhanced real generation rate. Accordingly, an additional photoconductance is caused in the textured wafer not occurring in the reference cell used in TrPCD.…”