Implications of electron beam irradiation on Al/n-Si Schottky junction properties

Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M.G.; Petwal, Vikash Chandra; Dwivedi, Jishnu; Phase, D. M.; Choudhary, R. J.

doi:10.1016/j.microrel.2018.07.031

Cited by 6 publications

(8 citation statements)

References 13 publications

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“…It is therefore important to correlate the junction parameters of both the conduction mechanisms. In literature the plots of (an indication of defect concentration [29]) and Φ J' were plotted against radiation doses to correlate them [24]. Fig.…”

Section: Analysis Of Power Law − Characteristicsmentioning

confidence: 99%

“…Also, value obtained from Eq. (12) plots must be taken under consideration in the evaluation of ( ) and Φ J' [13,22,24] 2. [16].…”

Section: Analysis Of − Characteristics By Thermionic Emission Theorymentioning

confidence: 99%

“…The greater the value of , the greater is the SBH inhomogeneity. This inhomogeneity is mainly attributed to the role of defects, either processed or irradiation induced [13,24,27]. Tung [28] also pointed out that the electrical data from polycrystalline Schottky barriers have always shown clear signs of SBH inhomogeneity.…”

Section: Analysis Of Power Law − Characteristicsmentioning

confidence: 99%

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Gamma irradiation effects on n-ZnSe/n-Si isotype heterojunctions

Vali

Keshav

Rajeshwari

et al. 2021

Preprint

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To get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by thermal evaporation technique. The X-ray diffraction (XRD) studies revealed the nanocrystalline nature of ZnSe thin films with prominent (111) orientations. The gamma irradiated samples displayed no crystallographic phase transformation up to 10 kGy irradiation doses. But noticeable and inconsistent modifications in the different lattice parameters were observed due to irradiation-induced effects. From the analysis of I-V characteristics, it has been found a similar trend in the variation of lattice mismatch, Schottky barrier height and interface trap parameter at different irradiation doses. Thus demonstrating the poor rectification properties of n-ZnSe/n-Si IHJs due to intrinsic and gamma-induced defects, and their role in the space charge limited conduction (SCLC) mechanism that significantly dominating over the thermionic emission (TE) mechanism across the barrier.

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Section: Analysis Of Power Law − Characteristicsmentioning

confidence: 99%

“…Also, value obtained from Eq. (12) plots must be taken under consideration in the evaluation of ( ) and Φ J' [13,22,24] 2. [16].…”

Section: Analysis Of − Characteristics By Thermionic Emission Theorymentioning

confidence: 99%

Section: Analysis Of Power Law − Characteristicsmentioning

confidence: 99%

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Gamma irradiation effects on n-ZnSe/n-Si isotype heterojunctions

Vali

Keshav

Rajeshwari

et al. 2021

Preprint

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“…Also, η value obtained from Eq. ( 12) plots must be taken under consideration in the evaluation of H I ð Þ and Φ B0 [13,22,24]. The selected downward curvature voltage regions for the unirradiated, 2, 4, 6, 8 and 10kGy gamma irradiated samples lie in the range of 0:14 À 0:25, 0:12 À 0:25, 0:32 À 0:39, 0:15 À 0 :20, 0:20 À 0:35 and 0:10 À 0:25V respectively.…”

Section: Xrd Analysismentioning

confidence: 99%

“…The greater the value Fig. 5 dV=d lnI ð Þvs:I plots of n À ZnSe=n À Si IHJs before and after gamma irradiation Silicon of η, the greater is the SBH This inhomogeneity is mainly attributed to the role of defects, either processed or irradiation induced [13,24,27]. [28] also pointed out that the electrical data from polycrystalline Schottky barriers have always shown clear signs of SBH inhomogeneity.…”

Section: Analysis Of Power Law I à V Characteristicsmentioning

confidence: 99%

Gamma Irradiation Effects on n-ZnSe/n-Si Isotype Heterojunctions

Vali

Keshav

Rajeshwari

et al. 2021

Silicon

Self Cite

View full text Add to dashboard Cite

To get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by thermal evaporation technique. The X-ray diffraction (XRD) studies revealed the nanocrystalline nature of ZnSe thin films with prominent (111) orientation. The gamma irradiated samples displayed no crystallographic phase transformation up to 10 kGy irradiation doses. But noticeable and inconsistent modifications in the different lattice parameters were observed due to irradiation-induced effects. From the analysis of I-V characteristics, it has been found a similar trend in the variation of lattice mismatch, Schottky barrier height and interface trap parameter at different irradiation doses. Thus demonstrating the poor rectification properties of n-ZnSe/n-Si IHJs due to intrinsic and gamma-induced defects, and their role in the space charge limited conduction (SCLC) mechanism that significantly dominating over the thermionic emission (TE) mechanism across the barrier.

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