2016
DOI: 10.1039/c6nr00494f
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Implications of orbital hybridization on the electronic properties of doped quantum dots: the case of Cu:CdSe

Abstract: This paper investigates how chemical dopants affect the electronic properties of CdSe quantum dots (QDs) and why a model that incorporates the concepts of orbital hybridization must be used to understand these properties. Extended X-ray absorption fine structure spectroscopy measurements show that copper dopants in CdSe QDs occur primarily through a statistical doping mechanism. Ultraviolet photoemission spectroscopy (UPS) experiments provide a detailed insight on the valence band (VB) structure of doped and u… Show more

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Cited by 20 publications
(28 citation statements)
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“…Recently, similar redshift in the PL emission spectra for Cu(I) doped CdSe CQDs has been shown with the increase in substitutional doping of Cu ions. 22 Their theoretical and experimental studies show the increase in Cu(I) doping results in orbital hybridization of lower CB states, which leads to redshift in the PL emission spectra. The slow increase in Cu emission for acetate based samples with the prolonged time of stirring after the completion of partial CE can also be possibly explained with the increase in Cu doping amounts in NPLs by unreacted Cu ions present in the solution or surface of NPLs.…”
Section: ■ Results and Analysesmentioning
confidence: 99%
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“…Recently, similar redshift in the PL emission spectra for Cu(I) doped CdSe CQDs has been shown with the increase in substitutional doping of Cu ions. 22 Their theoretical and experimental studies show the increase in Cu(I) doping results in orbital hybridization of lower CB states, which leads to redshift in the PL emission spectra. The slow increase in Cu emission for acetate based samples with the prolonged time of stirring after the completion of partial CE can also be possibly explained with the increase in Cu doping amounts in NPLs by unreacted Cu ions present in the solution or surface of NPLs.…”
Section: ■ Results and Analysesmentioning
confidence: 99%
“…45,46 However, controlling the position of individual VB/CB edges of CQDs with respect to photocathode/anode is needed for their practical applications in future CQD based devices. 22 Meulenberg et al have shown in the past few years that increasing the amount of Cu(I)-dopant ions in the host CdSe CQDs affects the lowest empty electronic states (CB) in a way inconsistent with the quantum confinement (QC) theory. 40 Concisely, increasing Cu(I)dopant ions in CdSe CQDs results in the decrease of CB edge (only), which further shifts the PL emission spectrum to longer wavelengths.…”
Section: ■ Discussionmentioning
confidence: 99%
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“…Moreover, compared with the PL spectra, the EL emission is redshifted, with peaks at ≈520 and ≈716 nm originating from CdSe and high doping Cu + ions, respectively. In particular, the redshift of the Cu EL peak in Device D is more obvious than that in Device B, as higher Cu doping concentrations can lower the CBM of CdSe due to orbital hybridization . In addition, a stronger Cu + emission can be observed in Device D. However, despite the higher doping concentration, the emission mechanism of Device D is similar to that of Device B (i.e., Cu functions as a hole trapping center).…”
Section: Summary Of Led Performancesmentioning
confidence: 99%
“…In particular, the redshift of the Cu EL peak in Device D is more obvious than that in Device B, as higher Cu doping concentrations can lower the CBM of CdSe due to orbital hybridization. [49,50] In addition, a stronger Cu + emission can be observed in Device D. However, despite the higher doping concentration, the emission mechanism of Device D is similar to that of Device B (i.e., Cu functions as a hole trapping center). This fact is further confirmed by the EL spectra of Device D, in which the Cu emission decreases with increasing voltage.…”
mentioning
confidence: 99%