Importance of surface modification of a microcontact stamp for pattern fidelity of soluble organic semiconductors

Park, Hea‐Lim; Lee, Bo‐Yeon; Kim, Se‐Um; Suh, Jeng-Hun; Kim, Min‐Hoi; Lee, Sin‐Doo

doi:10.1117/1.jmm.15.1.013501

Cited by 9 publications

(7 citation statements)

References 15 publications

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“…To investigate the bulk effect of the photoresponsive PVP gate insulator on the photoresponse, we fabricated two OPTs with different thicknesses (d) of the PVP gate insulator on the SiO 2 insulators; the values of d in the two different devices were approximately 60 and 260 nm (see Figure 1 for the schematic structure). It is noteworthy that the SiO 2 layers were exploited as first gate insulators such that the electrical characteristics of the OPTs were not changed significantly, even with the thinnest d of 60 nm [18,19,23,24]. As shown in Figure S2, gate leakage current levels of the two OPTs with different PVP thickness (d = 60 and 260 nm) were compared.…”

Section: Resultsmentioning

confidence: 99%

“…No significant difference in gate leakage current between these two devices was observed. This may be attributed to the high-quality insulating property of the first gate insulator (SiO 2 ) [18,19,23,24]. Figure 2 shows the transfer curves of the OPTs obtained for gate voltages (V g ) from 50 to −50 V at the drain voltage (V d ) of −50 V. The mobility was approximately 0.16 cm 2 /Vs for both d = 60 and 260 nm.…”

Section: Resultsmentioning

confidence: 99%

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Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators

Park

Kim

2020

Materials

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In this study, we investigate the bulk effect of photoresponsive gate insulators on the photoresponse of organic phototransistors (OPTs), using OPTs with poly(4-vinylphenol) layers of two different thicknesses. For the photoresponse, the interplay between the charge accumulation (capacitance) and light-absorbance capabilities of a photoresponsive gate insulator was investigated. Although an OPT with a thicker gate insulator exhibits a lower capacitance and hence a lower accumulation capability of photogenerating charges, a thicker poly(4-vinylphenol) layer, in contrast to a thinner one, absorbs more photons to generate more electron–hole pairs, resulting in a higher photoresponse of the device. That is, in these two cases, the degree of light absorption by the photoresponsive gate insulators dominantly governed the photoresponse of the device. Our physical description of the bulk effect of photoresponsive insulators on the performance of OPTs will provide a useful guideline for designing and constructing high-performance organic-based photosensing devices and systems.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators

Park

Kim

2020

Materials

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“…A heavily doped p-type Si wafer was used as a gate electrode, and 300-nm-thick thermally grown SiO 2 on the Si substrates was used as the first gate insulator. Note that SiO 2 was used because of its high insulating property [16]. The substrate was cleaned with acetone, isopropyl alcohol, methanol, and deionized water in sequence.…”

Section: Methodsmentioning

confidence: 99%

Modulation of memory effect in organic phototransistors by controlling energy barrier between organic semiconductor and source electrode

Park¹,

Kim²,

Kim³

2019

Semicond. Sci. Technol.

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The interfacial characteristics both at the organic semiconductor (OSC)/gate insulator and OSC/ source (S) and drain (D) are considered important factors affecting the charge carrier in organic electronics, but their effects on the optoelectrical performance of organic phototransistors (OPTs) have not been adequately studied. In this study, the effect of the energy barrier at the OSC/S interface on the photoresponse of an OPT is investigated and found to be significant. It is seen that the photoresponsive dynamics of the OPT are governed by the interplay between the energy barrier and the occupied trap sites. In a device with a relatively low energy barrier (Au-based OPT), the optical memory effect (slow decay time) is exhibited with high sensitivity to the trapping of photo-generated electrons, whereas, for the Al-based device with a high energy barrier, photo-sensing characteristics occur because of the low sensitivity toward the trapped electrons after light exposure. Our prototype OPT employing asymmetric SD electrodes exhibits the dual functions of optical memory and switching devices in a single cell. Each function of the device is selectively activated by the bias condition.

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“…On the PDMS stamp, O 2 plasma treatment (Cute plasma system, Femto Science; plasma generating frequency of 50 kHz) was followed for 40 s at the flow rate of 30 sccm for O 2 gas at 70 W under the pressure of 0.5 Torr. The top Au layer together with the CYTOP nanopillars was peeled off using the PDMS stamping method − to leave only six circular unit patterns of 2 mm in diameter on the MIM sample, complementary to the patterns of the PDMS stamp. Note that this is possible because the adhesion between the CYTOP layer and the bottom Au layer is relatively weak at the interface.…”

Section: Methodsmentioning

confidence: 99%

Highly Sensitive Color Tunablility by Scalable Nanomorphology of a Dielectric Layer in Liquid-Permeable Metal–Insulator–Metal Structure

Lee

Bae

et al. 2018

ACS Appl. Mater. Interfaces

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A liquid-permeable concept in a metal− insulator−metal (MIM) structure is proposed to achieve highly sensitive color-tuning property through the change of the effective refractive index of the dielectric insulator layer. A semicontinuous top metal film with nanoapertures, adopted as a transreflective layer for MIM resonator, allows to tailor the nanomorphology of a dielectric layer through selective etching of the underneath insulator layer, resulting in nanopillars and hollow voids in the insulator layer. By allowing outer mediums to enter into the hollow voids of the dielectric layer, such liquid-permeable MIM architecture enables to achieve the wavelength shift as large as 323.5 nm/RIU in the visible range, which is the largest wavelength shift reported so far. Our liquidpermeable approaches indeed provide dramatic color tunablility, a real-time sensing scheme, long-term durability, and reproducibility in a simple and scalable manner.

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Importance of surface modification of a microcontact stamp for pattern fidelity of soluble organic semiconductors

Cited by 9 publications

References 15 publications

Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators

Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators

Modulation of memory effect in organic phototransistors by controlling energy barrier between organic semiconductor and source electrode

Highly Sensitive Color Tunablility by Scalable Nanomorphology of a Dielectric Layer in Liquid-Permeable Metal–Insulator–Metal Structure

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