Important Phase Control of Indium Sulfide Nanomaterials by Choice of Indium(III) Xanthate Precursor and Thermolysis Temperature

Masikane, Siphamandla C.; McNaughter, Paul D.; Lewis, David J.; Vitórica-Yrezábal, Iñigo J.; Doyle, Bryan P.; Carleschi, Emanuela; O’Brien, Paul; Revaprasadu, Neerish

doi:10.1002/ejic.201900007

Cited by 14 publications

(5 citation statements)

References 72 publications

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“…Recently, 3D transition metal impurities in semiconductor nanoparticles attracted significant interest because of their effect on tuning the emission bands [ 24 , 25 ]. A study of commercially doped In 2 S 3 will provide an alternative approach for understanding the energy-related applications of this material.…”

Section: Introductionmentioning

confidence: 99%

Physical and Dielectric Properties of Ni-Doped In2S3 Powders for Optical Windows in Thin Film Solar Cells

et al. 2021

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This paper reports the effect of Nickel (Ni) on indium sulfide (In2S3) powder. This work presents a systematic study of the physical and dielectric properties of In2-xS3Nix powders with 0, 2, 4, and 6 at.% of nickel. Doped and undoped samples were investigated by X-ray powder diffraction (XRD), energy dispersive X-ray spectroscopy, thermal gravimetric analysis, Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), and impedance spectroscopy. XRD patterns revealed that each In2-xS3Nix composition was crystalline, which was also confirmed by the FTIR results. The presence of Ni in the samples was confirmed by energy dispersive spectroscopy (EDS). The Raman studies show different peaks related to the In2S3 phase and do not reveal any secondary phases of In–Ni and Ni–S. The SEM images of the undoped and Ni-doped In2S3 samples indicated a correlation between dopant content and the surface roughness and porosity of the samples. The impedance analysis indicated semiconductor behavior present in all samples, as well as a decrease in resistance with increasing Ni content. This work opens up the possibility of tailoring the properties and integrating Ni-doped In2S3 nanocomposites as thin film layers in future solar cells.

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Section: Introductionmentioning

confidence: 99%

Physical and Dielectric Properties of Ni-Doped In2S3 Powders for Optical Windows in Thin Film Solar Cells

et al. 2021

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“…Advantages conferred by this sort of synthetic route include the ability to carry out low temperature decomposition, the ease of synthesis and stability of the resulting compound in air, along with the fact that by-products for these materials are generally gaseous. O'Brien & Lewis have reported a number of such syntheses for a range of main group and transition metal sulfides [45][46][47][48][49][50] .…”

mentioning

confidence: 99%

Direct synthesis of nanostructured silver antimony sulfide powders from metal xanthate precursors

Alharbi

Alam

Salhi

et al. 2021

Sci Rep

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Silver(I) ethylxanthate [AgS2COEt] (1) and antimony(III) ethylxanthate [Sb(S2COEt)3] (2) have been synthesised, characterised and used as precursors for the preparation of AgSbS2 powders and thin films using a solvent-free melt method and spin coating technique, respectively. The as-synthesized AgSbS2 powders were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy. The crystalline AgSbS2 powder was investigated using XRD, which shows that AgSbS2 has cuboargyrite as the dominant phase, which was also confirmed by Raman spectroscopy. SEM was also used to study the morphology of the resulting material which is potentially nanostructured. EDX spectra gives a clear indication of the presence of silver (Ag), antimony (Sb) and sulfur (S) in material, suggesting that decomposition is clean and produces high quality AgSbS2 crystalline powder, which is consistent with the XRD and Raman data. Electronic properties of AgSbS2 thin films deposited by spin coating show a p-type conductivity with measured carrier mobility of 81 cm2 V−1 s−1 and carrier concentration of 1.9 × 1015 cm−3. The findings of this study reveal a new bottom-up route to these compounds, which have potential application as absorber layers in solar cells.

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“…Metal xanthate complexes offer a synthetically convenient route to metal chalcogenide semiconductors due to the ease of synthesis, low thermolysis temperatures, and volatile byproducts. Thermolysis has been performed in solvents, − in soft media, − and by solventless thermolysis ,− showing the versatility of metal xanthate complexes to form metal sulfides with control over size and composition. The ability to control the solubility of the complex through choice of alkyl group allows for solution processing techniques to be used. ,,,− Consequently, control over metal xanthate solubility allows the potential for use of spin coating, ,− , drop casting, and the processing of the metal xanthate complex in combination with other dissolved molecules.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor Deposition via Laser Printing of a Bespoke Toner Containing Metal Xanthate Complexes

McNaughter,

Moore,

Yeates

et al. 2024

ACS Appl. Eng. Mater.

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A methodology to use laser printing, a form of electrophotography, to print metal chalcogenide complexes on paper, is described. After fusing the toner to paper, a heating step is used to cause the printed metal xanthate complexes to thermolyze within the toner and form three target metal chalcogenides: CuS, SnS, and ZnS. To achieve this, we synthesize a poly(styrene-co-n-butyl acrylate) thermopolymer that emulates the thermal properties of a commercial toner and is also solution processable with the metal xanthate complexes used: [Zn(S 2 COEt) 2 ], [Cu(S 2 COEt)•(PPh 3 ) 2 ], and [Sn(S 2 COEt) 2 ]. We demonstrate through energy dispersive X-ray mapping that the toner is deposited following printing and that thermolysis of the metal xanthate complexes occurs in the fused toner, demonstrating the first example of laser printing of inorganic complexes and, in turn, semiconductors.

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Important Phase Control of Indium Sulfide Nanomaterials by Choice of Indium(III) Xanthate Precursor and Thermolysis Temperature

Cited by 14 publications

References 72 publications

Physical and Dielectric Properties of Ni-Doped In2S3 Powders for Optical Windows in Thin Film Solar Cells

Physical and Dielectric Properties of Ni-Doped In2S3 Powders for Optical Windows in Thin Film Solar Cells

Direct synthesis of nanostructured silver antimony sulfide powders from metal xanthate precursors

Semiconductor Deposition via Laser Printing of a Bespoke Toner Containing Metal Xanthate Complexes

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